HEMT Noise Modeling for D Band Low Noise Amplifier Design

Ao Zhang; Jianjun Gao

doi:10.1109/JEDS.2024.3475289

HEMT Noise Modeling for D Band Low Noise Amplifier Design

Ao Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120-160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simulated results of S-parameters and noise figure show the good agreement with measured data to verify the accuracy of the proposed model.

Original language	English
Pages (from-to)	928-933
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	12
DOIs	https://doi.org/10.1109/JEDS.2024.3475289
State	Published - 2024

Keywords

GaAs
PIN
diode
equivalent circuit model

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10.1109/JEDS.2024.3475289

Cite this

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title = "HEMT Noise Modeling for D Band Low Noise Amplifier Design",

abstract = "An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120-160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simulated results of S-parameters and noise figure show the good agreement with measured data to verify the accuracy of the proposed model.",

keywords = "GaAs, PIN, diode, equivalent circuit model",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2024",

doi = "10.1109/JEDS.2024.3475289",

language = "英语",

volume = "12",

pages = "928--933",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - HEMT Noise Modeling for D Band Low Noise Amplifier Design

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2024

Y1 - 2024

N2 - An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120-160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simulated results of S-parameters and noise figure show the good agreement with measured data to verify the accuracy of the proposed model.

AB - An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120-160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simulated results of S-parameters and noise figure show the good agreement with measured data to verify the accuracy of the proposed model.

KW - GaAs

KW - PIN

KW - diode

KW - equivalent circuit model

UR - https://www.scopus.com/pages/publications/85206977161

U2 - 10.1109/JEDS.2024.3475289

DO - 10.1109/JEDS.2024.3475289

M3 - 文章

AN - SCOPUS:85206977161

SN - 2168-6734

VL - 12

SP - 928

EP - 933

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

HEMT Noise Modeling for D Band Low Noise Amplifier Design

Abstract

Keywords

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