Heat-treating effect on the properties of Pb1-xla x(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process

Fuwen Shi; Genshui Wang; Xiangjian Meng; Jinglan Sun; Junhao Chu

doi:10.1117/12.607555

Heat-treating effect on the properties of Pb_1-xla _x(Zr_0.4Ti_0.6)O₃ ferroelectric thin film prepared by a modified sol-gel process

Fuwen Shi, Genshui Wang, Xiangjian Meng, Jinglan Sun, Junhao Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

2 mol% Lanthanum doped lead zirconate titanate Pb(Zr_0.4Ti _0.6)O₃ ferroelectric thin film were successfully deposited by a modified sol-gel method on(111) Pt/Ti/SiO₂/Si(100) substrate, the effect of heat-treatment on the properties of microstructure and ferroelectric was investigated. It is shown that deposited on (111)Pt lead to (111) preferred orientation. The PLZT thin film annealing at 700°C show good ferroelctric properties with a large remnant polarization of 40μ C/cm ², a spontaneous polarization of 75.7μ, C/cm², and a coercive field of 112kV/cm under an electric field of 650kV/cm. The dielectric constant increased with annealing temperature.

Original language	English
Article number	36
Pages (from-to)	164-167
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.607555
State	Published - 2005
Externally published	Yes
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

Coercive field
Ferroelectric thin films
Remnant polarization
Sol-gel

Access to Document

10.1117/12.607555

Cite this

@article{e570afa97f3e4fe7a3451479d818e494,

title = "Heat-treating effect on the properties of Pb1-xla x(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process",

abstract = "2 mol\% Lanthanum doped lead zirconate titanate Pb(Zr0.4Ti 0.6)O3 ferroelectric thin film were successfully deposited by a modified sol-gel method on(111) Pt/Ti/SiO2/Si(100) substrate, the effect of heat-treatment on the properties of microstructure and ferroelectric was investigated. It is shown that deposited on (111)Pt lead to (111) preferred orientation. The PLZT thin film annealing at 700°C show good ferroelctric properties with a large remnant polarization of 40μ C/cm 2, a spontaneous polarization of 75.7μ, C/cm2, and a coercive field of 112kV/cm under an electric field of 650kV/cm. The dielectric constant increased with annealing temperature.",

keywords = "Coercive field, Ferroelectric thin films, Remnant polarization, Sol-gel",

author = "Fuwen Shi and Genshui Wang and Xiangjian Meng and Jinglan Sun and Junhao Chu",

year = "2005",

doi = "10.1117/12.607555",

language = "英语",

volume = "5774",

pages = "164--167",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

Heat-treating effect on the properties of Pb_1-xla _x(Zr_0.4Ti_0.6)O₃ ferroelectric thin film prepared by a modified sol-gel process. / Shi, Fuwen; Wang, Genshui; Meng, Xiangjian et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5774, 36, 2005, p. 164-167.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Heat-treating effect on the properties of Pb1-xla x(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process

AU - Shi, Fuwen

AU - Wang, Genshui

AU - Meng, Xiangjian

AU - Sun, Jinglan

AU - Chu, Junhao

PY - 2005

Y1 - 2005

N2 - 2 mol% Lanthanum doped lead zirconate titanate Pb(Zr0.4Ti 0.6)O3 ferroelectric thin film were successfully deposited by a modified sol-gel method on(111) Pt/Ti/SiO2/Si(100) substrate, the effect of heat-treatment on the properties of microstructure and ferroelectric was investigated. It is shown that deposited on (111)Pt lead to (111) preferred orientation. The PLZT thin film annealing at 700°C show good ferroelctric properties with a large remnant polarization of 40μ C/cm 2, a spontaneous polarization of 75.7μ, C/cm2, and a coercive field of 112kV/cm under an electric field of 650kV/cm. The dielectric constant increased with annealing temperature.

AB - 2 mol% Lanthanum doped lead zirconate titanate Pb(Zr0.4Ti 0.6)O3 ferroelectric thin film were successfully deposited by a modified sol-gel method on(111) Pt/Ti/SiO2/Si(100) substrate, the effect of heat-treatment on the properties of microstructure and ferroelectric was investigated. It is shown that deposited on (111)Pt lead to (111) preferred orientation. The PLZT thin film annealing at 700°C show good ferroelctric properties with a large remnant polarization of 40μ C/cm 2, a spontaneous polarization of 75.7μ, C/cm2, and a coercive field of 112kV/cm under an electric field of 650kV/cm. The dielectric constant increased with annealing temperature.

KW - Coercive field

KW - Ferroelectric thin films

KW - Remnant polarization

KW - Sol-gel

UR - https://www.scopus.com/pages/publications/25644448996

U2 - 10.1117/12.607555

DO - 10.1117/12.607555

M3 - 会议文章

AN - SCOPUS:25644448996

SN - 0277-786X

VL - 5774

SP - 164

EP - 167

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 36

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Heat-treating effect on the properties of Pb_1-xla _x(Zr_0.4Ti_0.6)O₃ ferroelectric thin film prepared by a modified sol-gel process

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this