Growth, structure, and optical properties of GaSb quantum dot by LPE technique

F. Qiu; Y. Zhang; Y. F. Lv; J. H. Guo; G. J. Hu; S. Sun; H. Y. Deng; S. H. Hu; N. Dai; Q. D. Zhuang; M. Yin; A. Krier; Z. Zhao

doi:10.1109/INEC.2013.6465998

Growth, structure, and optical properties of GaSb quantum dot by LPE technique

F. Qiu
, Y. Zhang
, Y. F. Lv
, J. H. Guo
, G. J. Hu
, S. Sun
, H. Y. Deng
, S. H. Hu^*
, N. Dai
, Q. D. Zhuang
, M. Yin
, A. Krier
, Z. Zhao

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
Lancaster University
University of Science and Technology of China

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image of single quantum dot and to present the composition of QDs by focused energy dispersive X-ray (EDX). Feature of QDs of room-temperature photoluminescence (PL) spectroscopy is obvious, and the peak of the QDs at ∼l.leV is well separated from wetting layer (WL) at ∼ 1.34 eV.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages	203-204
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2013.6465998
State	Published - 2013
Externally published	Yes
Event	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore Duration: 2 Jan 2013 → 4 Jan 2013

Publication series

Name	Proceedings - Winter Simulation Conference
ISSN (Print)	0891-7736

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/Territory	Singapore
City	Singapore
Period	2/01/13 → 4/01/13

Keywords

GaSb QDs
PL spectrum and liquid phase epitaxy
X-TEM

Access to Document

10.1109/INEC.2013.6465998

Cite this

Qiu, F., Zhang, Y., Lv, Y. F., Guo, J. H., Hu, G. J., Sun, S., Deng, H. Y., Hu, S. H., Dai, N., Zhuang, Q. D., Yin, M., Krier, A., & Zhao, Z. (2013). Growth, structure, and optical properties of GaSb quantum dot by LPE technique. In Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 (pp. 203-204). Article 6465998 (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6465998

@inproceedings{73821fcf585147c8b733f9f418bff8f8,

title = "Growth, structure, and optical properties of GaSb quantum dot by LPE technique",

abstract = "In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image of single quantum dot and to present the composition of QDs by focused energy dispersive X-ray (EDX). Feature of QDs of room-temperature photoluminescence (PL) spectroscopy is obvious, and the peak of the QDs at ∼l.leV is well separated from wetting layer (WL) at ∼ 1.34 eV.",

keywords = "GaSb QDs, PL spectrum and liquid phase epitaxy, X-TEM",

author = "F. Qiu and Y. Zhang and Lv, \{Y. F.\} and Guo, \{J. H.\} and Hu, \{G. J.\} and S. Sun and Deng, \{H. Y.\} and Hu, \{S. H.\} and N. Dai and Zhuang, \{Q. D.\} and M. Yin and A. Krier and Z. Zhao",

year = "2013",

doi = "10.1109/INEC.2013.6465998",

language = "英语",

isbn = "9781467348416",

series = "Proceedings - Winter Simulation Conference",

pages = "203--204",

booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

}

Qiu, F, Zhang, Y, Lv, YF, Guo, JH, Hu, GJ, Sun, S, Deng, HY, Hu, SH, Dai, N, Zhuang, QD, Yin, M, Krier, A & Zhao, Z 2013, Growth, structure, and optical properties of GaSb quantum dot by LPE technique. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013., 6465998, Proceedings - Winter Simulation Conference, pp. 203-204, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 2/01/13. https://doi.org/10.1109/INEC.2013.6465998

Growth, structure, and optical properties of GaSb quantum dot by LPE technique. / Qiu, F.; Zhang, Y.; Lv, Y. F. et al.
Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 203-204 6465998 (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth, structure, and optical properties of GaSb quantum dot by LPE technique

AU - Qiu, F.

AU - Zhang, Y.

AU - Lv, Y. F.

AU - Guo, J. H.

AU - Hu, G. J.

AU - Sun, S.

AU - Deng, H. Y.

AU - Hu, S. H.

AU - Dai, N.

AU - Zhuang, Q. D.

AU - Yin, M.

AU - Krier, A.

AU - Zhao, Z.

PY - 2013

Y1 - 2013

N2 - In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image of single quantum dot and to present the composition of QDs by focused energy dispersive X-ray (EDX). Feature of QDs of room-temperature photoluminescence (PL) spectroscopy is obvious, and the peak of the QDs at ∼l.leV is well separated from wetting layer (WL) at ∼ 1.34 eV.

AB - In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image of single quantum dot and to present the composition of QDs by focused energy dispersive X-ray (EDX). Feature of QDs of room-temperature photoluminescence (PL) spectroscopy is obvious, and the peak of the QDs at ∼l.leV is well separated from wetting layer (WL) at ∼ 1.34 eV.

KW - GaSb QDs

KW - PL spectrum and liquid phase epitaxy

KW - X-TEM

UR - https://www.scopus.com/pages/publications/84874772751

U2 - 10.1109/INEC.2013.6465998

DO - 10.1109/INEC.2013.6465998

M3 - 会议稿件

AN - SCOPUS:84874772751

SN - 9781467348416

T3 - Proceedings - Winter Simulation Conference

SP - 203

EP - 204

BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

Y2 - 2 January 2013 through 4 January 2013

ER -

Growth, structure, and optical properties of GaSb quantum dot by LPE technique

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