Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

K. A. Prior; S. A. Telfer; X. Tang; C. Morhain; B. Urbaszek; C. O'Donnell; P. Tomasini; A. Balocchi; B. C. Cavenett

doi:10.1016/S0022-0248(01)00792-8

Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

K. A. Prior^*
, S. A. Telfer
, X. Tang
, C. Morhain
, B. Urbaszek
, C. O'Donnell
, P. Tomasini
, A. Balocchi
, B. C. Cavenett

^*Corresponding author for this work

Heriot-Watt University

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition.

Original language	English
Pages (from-to)	655-659
Number of pages	5
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00792-8
State	Published - Jul 2001
Externally published	Yes
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 11 Sep 2000 → 15 Sep 2000

Keywords

A1. X-ray diffraction
A3. Molecular beam epitaxy
A3. Quantum wells
B1. Cadmium compounds
B1. Sulfides
B1. Zinc compounds
B2. Semiconducting II-VI materials

Access to Document

10.1016/S0022-0248(01)00792-8

Cite this

@article{101f89c64da048bdb6e68209363512c7,

title = "Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP",

abstract = "In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition.",

keywords = "A1. X-ray diffraction, A3. Molecular beam epitaxy, A3. Quantum wells, B1. Cadmium compounds, B1. Sulfides, B1. Zinc compounds, B2. Semiconducting II-VI materials",

author = "Prior, \{K. A.\} and Telfer, \{S. A.\} and X. Tang and C. Morhain and B. Urbaszek and C. O'Donnell and P. Tomasini and A. Balocchi and Cavenett, \{B. C.\}",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00792-8",

language = "英语",

volume = "227-228",

pages = "655--659",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

}

TY - JOUR

T1 - Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

AU - Prior, K. A.

AU - Telfer, S. A.

AU - Tang, X.

AU - Morhain, C.

AU - Urbaszek, B.

AU - O'Donnell, C.

AU - Tomasini, P.

AU - Balocchi, A.

AU - Cavenett, B. C.

PY - 2001/7

Y1 - 2001/7

N2 - In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition.

AB - In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition.

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - A3. Quantum wells

KW - B1. Cadmium compounds

KW - B1. Sulfides

KW - B1. Zinc compounds

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/0035398208

U2 - 10.1016/S0022-0248(01)00792-8

DO - 10.1016/S0022-0248(01)00792-8

M3 - 会议文章

AN - SCOPUS:0035398208

SN - 0022-0248

VL - 227-228

SP - 655

EP - 659

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this