Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications

Z. Q. Li; Q. Q. Liu; J. J. Li; Z. Sun; Y. W. Chen; Z. Yang; S. M. Huang

doi:10.1016/j.sse.2011.10.008

Growth of Zn doped Cu(In, Ga)Se ₂ thin films by RF sputtering for solar cell applications

Z. Q. Li, Q. Q. Liu, J. J. Li, Z. Sun, Y. W. Chen, Z. Yang, S. M. Huang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Cu(In, Ga)Se ₂ (CIGS) surface was modified with Zn doping using a magnetron sputtering method. CuInGa:Zn precursor films targeting a CuIn _0.7Ga _0.3Se ₂ stoichiometry with increasing Zn content from 0 to 0.8 at% were prepared onto Mo-coated glass substrates via co-sputtering of Cu-Ga alloy, In and Zn targets. The CuInGa:Zn precursors were then selenized with solid Se pellets. The structures and morphologies of grown Zn doped CIGS films were found to depend on the Zn content. At zinc doping level ranging between 0.2 and 0.6 at%, the Zn doping improved the crystallinity and surface morphology of CIGS films. Compared with the performance of the non-doped CIGS cell, the fabricated CIGS solar cell displayed a relative efficiency enhancement of 9-22% and the maximum enhancement was obtained at a Zn content of 0.4 at%.

Original language	English
Pages (from-to)	80-84
Number of pages	5
Journal	Solid-State Electronics
Volume	68
DOIs	https://doi.org/10.1016/j.sse.2011.10.008
State	Published - Feb 2012

Keywords

Cu(In, Ga)Se
Doping
Selenization
Solar cells
Sputtering
Thin film

Access to Document

10.1016/j.sse.2011.10.008

Cite this

@article{8105031eacc04ab79503cb4514238ce2,

title = "Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications",

abstract = "Cu(In, Ga)Se 2 (CIGS) surface was modified with Zn doping using a magnetron sputtering method. CuInGa:Zn precursor films targeting a CuIn 0.7Ga 0.3Se 2 stoichiometry with increasing Zn content from 0 to 0.8 at\% were prepared onto Mo-coated glass substrates via co-sputtering of Cu-Ga alloy, In and Zn targets. The CuInGa:Zn precursors were then selenized with solid Se pellets. The structures and morphologies of grown Zn doped CIGS films were found to depend on the Zn content. At zinc doping level ranging between 0.2 and 0.6 at\%, the Zn doping improved the crystallinity and surface morphology of CIGS films. Compared with the performance of the non-doped CIGS cell, the fabricated CIGS solar cell displayed a relative efficiency enhancement of 9-22\% and the maximum enhancement was obtained at a Zn content of 0.4 at\%.",

keywords = "Cu(In, Ga)Se, Doping, Selenization, Solar cells, Sputtering, Thin film",

author = "Li, \{Z. Q.\} and Liu, \{Q. Q.\} and Li, \{J. J.\} and Z. Sun and Chen, \{Y. W.\} and Z. Yang and Huang, \{S. M.\}",

year = "2012",

month = feb,

doi = "10.1016/j.sse.2011.10.008",

language = "英语",

volume = "68",

pages = "80--84",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications

AU - Li, Z. Q.

AU - Liu, Q. Q.

AU - Li, J. J.

AU - Sun, Z.

AU - Chen, Y. W.

AU - Yang, Z.

AU - Huang, S. M.

PY - 2012/2

Y1 - 2012/2

N2 - Cu(In, Ga)Se 2 (CIGS) surface was modified with Zn doping using a magnetron sputtering method. CuInGa:Zn precursor films targeting a CuIn 0.7Ga 0.3Se 2 stoichiometry with increasing Zn content from 0 to 0.8 at% were prepared onto Mo-coated glass substrates via co-sputtering of Cu-Ga alloy, In and Zn targets. The CuInGa:Zn precursors were then selenized with solid Se pellets. The structures and morphologies of grown Zn doped CIGS films were found to depend on the Zn content. At zinc doping level ranging between 0.2 and 0.6 at%, the Zn doping improved the crystallinity and surface morphology of CIGS films. Compared with the performance of the non-doped CIGS cell, the fabricated CIGS solar cell displayed a relative efficiency enhancement of 9-22% and the maximum enhancement was obtained at a Zn content of 0.4 at%.

AB - Cu(In, Ga)Se 2 (CIGS) surface was modified with Zn doping using a magnetron sputtering method. CuInGa:Zn precursor films targeting a CuIn 0.7Ga 0.3Se 2 stoichiometry with increasing Zn content from 0 to 0.8 at% were prepared onto Mo-coated glass substrates via co-sputtering of Cu-Ga alloy, In and Zn targets. The CuInGa:Zn precursors were then selenized with solid Se pellets. The structures and morphologies of grown Zn doped CIGS films were found to depend on the Zn content. At zinc doping level ranging between 0.2 and 0.6 at%, the Zn doping improved the crystallinity and surface morphology of CIGS films. Compared with the performance of the non-doped CIGS cell, the fabricated CIGS solar cell displayed a relative efficiency enhancement of 9-22% and the maximum enhancement was obtained at a Zn content of 0.4 at%.

KW - Cu(In, Ga)Se

KW - Doping

KW - Selenization

KW - Solar cells

KW - Sputtering

KW - Thin film

UR - https://www.scopus.com/pages/publications/84655167615

U2 - 10.1016/j.sse.2011.10.008

DO - 10.1016/j.sse.2011.10.008

M3 - 文章

AN - SCOPUS:84655167615

SN - 0038-1101

VL - 68

SP - 80

EP - 84

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Growth of Zn doped Cu(In, Ga)Se ₂ thin films by RF sputtering for solar cell applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this