Growth of highly (h00) oriented barium strontium titanate films on silicon substrates using conducting LaNiO3 electrode

  • Y. H. Gao
  • , J. H. Ma
  • , J. L. Sun
  • , X. J. Meng
  • , J. H. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

(Ba,Sr)TiO3 (BST) thin films were deposited on the conducting perovskite LaNiO3 electrode by radio-frequency (rf) magnetron sputtering technique. To investigate the crystalline of BST films, the substrate temperatures (Td) in the range of 100°C-700°C were applied. The transition from amorphous phase to polycrystalline phase for the films occurred at low growth temperature 300°C. When the growth temperature approached 500°C, highly (h00)-oriented films were obtained. The relative dielectric constant (εr) increased rapidly with enhancing growth temperature because of improved crystallinity, and showed slowly increase above 500°C. In addition, the capacitance-voltage characteristics were studied with various growth temperatures. The tunability increased largely with good crystallinity. This can be attributed to increased dielectric constants.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
DOIs
StatePublished - 2008
Externally publishedYes
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: 25 Sep 200728 Sep 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6984
ISSN (Print)0277-786X

Conference

Conference6th International Conference on Thin Film Physics and Applications, TFPA 2007
Country/TerritoryChina
CityShanghai
Period25/09/0728/09/07

Keywords

  • (Ba, Sr)TiO thin films
  • LaNiO electrode

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