Growth of Hg1 - XCdxTe liquid phase epitaxial films on vicinal planes

  • Biao Li*
  • , J. H. Chu
  • , J. Q. Zhu
  • , X. Q. Chen
  • , J. Y. Cao
  • , D. Y. Tang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Hg1 - xCdxTe films were prepared by a dipping liquid phase epitaxy (LPE) technique on spherical CdTe substrate with several different misoriented facets, and were characterized by microscopy, infrared absorption spectra, Raman scattering, and X-ray double crystal diffraction. The results show that the epilayers grown on the 1.2° off (111) substrate exhibit better crystal quality and less Te precipitates than those grown on other titled substrates. The investigation seems to provide a novel way for growth of better quality Hg1 - xCdxTe films.

Original languageEnglish
Pages (from-to)480-484
Number of pages5
JournalJournal of Crystal Growth
Volume169
Issue number3
DOIs
StatePublished - Dec 1996
Externally publishedYes

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