Abstract
Hg1 - xCdxTe films were prepared by a dipping liquid phase epitaxy (LPE) technique on spherical CdTe substrate with several different misoriented facets, and were characterized by microscopy, infrared absorption spectra, Raman scattering, and X-ray double crystal diffraction. The results show that the epilayers grown on the 1.2° off (111) substrate exhibit better crystal quality and less Te precipitates than those grown on other titled substrates. The investigation seems to provide a novel way for growth of better quality Hg1 - xCdxTe films.
| Original language | English |
|---|---|
| Pages (from-to) | 480-484 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 169 |
| Issue number | 3 |
| DOIs | |
| State | Published - Dec 1996 |
| Externally published | Yes |