Abstract
In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.
| Original language | English |
|---|---|
| Pages (from-to) | 419-422 |
| Number of pages | 4 |
| Journal | International Journal of Nanoscience |
| Volume | 4 |
| Issue number | 4 |
| DOIs | |
| State | Published - Aug 2005 |
| Externally published | Yes |
Keywords
- Aligned carbon nanotubes
- Carbon nanotubes
- Chemical vapor deposition
- Reactive ion etching