Growth of (1 0 0)-oriented LaNiO₃ thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films

LaNiO₃ (LNO) thin films directly on Si (1 0 0) substrates were prepared by a simple metalorganic decomposition (MOD) technique at annealing temperatures ranging from 450 °C to 650 °C using a rapid thermal annealing (RTA) method. Highly (1 0 0)-oriented LNO thin films were obtained at low annealing temperature of 550 °C. The results indicate the LNO film annealed at 600 °C exhibits good metallic property, which is comparable with the LNO films derived from physical techniques. A subsequent deposition of sol-gel derived Pb(Zr_0.52Ti_0.48)O₃ (PZT52/48) thin film on the LNO-coated Si substrate was also found to have a (1 0 0)-oriented texture. The ferroelectric capacitor derived from these films displayed a good P-E hysteresis characteristic.