Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

Feng Qiu; Yingfei Lv; Jianhua Guo; Yan Sun; Huiyong Deng; Shuhong Hu; Ning Dai

doi:10.3788/COL201210.S21603

Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

Feng Qiu
, Yingfei Lv
, Jianhua Guo
, Yan Sun
, Huiyong Deng
, Shuhong Hu^*
, Ning Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.

Original language	English
Article number	S21603
Journal	Chinese Optics Letters
Volume	10
Issue number	SUPPL.2
DOIs	https://doi.org/10.3788/COL201210.S21603
State	Published - Dec 2012
Externally published	Yes

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title = "Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy",

abstract = "The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.",

author = "Feng Qiu and Yingfei Lv and Jianhua Guo and Yan Sun and Huiyong Deng and Shuhong Hu and Ning Dai",

year = "2012",

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doi = "10.3788/COL201210.S21603",

language = "英语",

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T1 - Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

AU - Qiu, Feng

AU - Lv, Yingfei

AU - Guo, Jianhua

AU - Sun, Yan

AU - Deng, Huiyong

AU - Hu, Shuhong

AU - Dai, Ning

PY - 2012/12

Y1 - 2012/12

N2 - The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.

AB - The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.

UR - https://www.scopus.com/pages/publications/84874497066

U2 - 10.3788/COL201210.S21603

DO - 10.3788/COL201210.S21603

M3 - 文章

AN - SCOPUS:84874497066

SN - 1671-7694

VL - 10

JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - SUPPL.2

M1 - S21603

ER -

Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

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