Growth and properties of SrBi2TaNbO9 ferroelectric thin films using pulsed laser deposition

Pingxiong Yang; Hongmei Deng; Meirong Shi; Ziyang Tong; Sumei Qin

doi:10.1016/j.mseb.2006.10.017

Growth and properties of SrBi₂TaNbO₉ ferroelectric thin films using pulsed laser deposition

Pingxiong Yang^*
, Hongmei Deng
, Meirong Shi
, Ziyang Tong
, Sumei Qin

^*Corresponding author for this work

School of Physics and Electronic Science

Shanghai University
East China Normal University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

High quality SrBi₂TaNbO₉ (SBTN) ferroelectric thin films were fabricated on platinized silicon by pulsed laser deposition. Microstructure and ferroelectric properties of the films were characterized. Optical fatigue (light/bias) for the thin films was studied and the average remanent polarization dropped by nearly 55% due to the bias/illumination treatment. Optical properties of the thin films were studied by spectroscopic ellipsometry (SE) from the ultraviolet to the infrared region. Optical constants, n ∼ 0.16 in the infrared region and n ∼ 2.12 in the visible spectral region, were determined through refractive index functions. The band gap energy is estimated to be 3.93 eV.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	137
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2006.10.017
State	Published - 25 Feb 2007

Keywords

Ferroelectric
PLD
Thin films

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10.1016/j.mseb.2006.10.017

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title = "Growth and properties of SrBi2TaNbO9 ferroelectric thin films using pulsed laser deposition",

abstract = "High quality SrBi2TaNbO9 (SBTN) ferroelectric thin films were fabricated on platinized silicon by pulsed laser deposition. Microstructure and ferroelectric properties of the films were characterized. Optical fatigue (light/bias) for the thin films was studied and the average remanent polarization dropped by nearly 55\% due to the bias/illumination treatment. Optical properties of the thin films were studied by spectroscopic ellipsometry (SE) from the ultraviolet to the infrared region. Optical constants, n ∼ 0.16 in the infrared region and n ∼ 2.12 in the visible spectral region, were determined through refractive index functions. The band gap energy is estimated to be 3.93 eV.",

keywords = "Ferroelectric, PLD, Thin films",

author = "Pingxiong Yang and Hongmei Deng and Meirong Shi and Ziyang Tong and Sumei Qin",

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doi = "10.1016/j.mseb.2006.10.017",

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TY - JOUR

T1 - Growth and properties of SrBi2TaNbO9 ferroelectric thin films using pulsed laser deposition

AU - Yang, Pingxiong

AU - Deng, Hongmei

AU - Shi, Meirong

AU - Tong, Ziyang

AU - Qin, Sumei

PY - 2007/2/25

Y1 - 2007/2/25

N2 - High quality SrBi2TaNbO9 (SBTN) ferroelectric thin films were fabricated on platinized silicon by pulsed laser deposition. Microstructure and ferroelectric properties of the films were characterized. Optical fatigue (light/bias) for the thin films was studied and the average remanent polarization dropped by nearly 55% due to the bias/illumination treatment. Optical properties of the thin films were studied by spectroscopic ellipsometry (SE) from the ultraviolet to the infrared region. Optical constants, n ∼ 0.16 in the infrared region and n ∼ 2.12 in the visible spectral region, were determined through refractive index functions. The band gap energy is estimated to be 3.93 eV.

AB - High quality SrBi2TaNbO9 (SBTN) ferroelectric thin films were fabricated on platinized silicon by pulsed laser deposition. Microstructure and ferroelectric properties of the films were characterized. Optical fatigue (light/bias) for the thin films was studied and the average remanent polarization dropped by nearly 55% due to the bias/illumination treatment. Optical properties of the thin films were studied by spectroscopic ellipsometry (SE) from the ultraviolet to the infrared region. Optical constants, n ∼ 0.16 in the infrared region and n ∼ 2.12 in the visible spectral region, were determined through refractive index functions. The band gap energy is estimated to be 3.93 eV.

KW - Ferroelectric

KW - PLD

KW - Thin films

UR - https://www.scopus.com/pages/publications/33846829552

U2 - 10.1016/j.mseb.2006.10.017

DO - 10.1016/j.mseb.2006.10.017

M3 - 文章

AN - SCOPUS:33846829552

SN - 0921-5107

VL - 137

SP - 99

EP - 102

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Growth and properties of SrBi₂TaNbO₉ ferroelectric thin films using pulsed laser deposition

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Keywords

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