Abstract
AlN thin films with different orientation degrees, i.e., (0002) textured, (0002) textured with traces of non-(0002) components, and randomly oriented, were deposited by radio frequency magnetron sputtering. The films were comprehensively characterized using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The dependence of orientation degree on the nitrogen partial pressure during the deposition processes was revealed. Based on microstructural analysis with high-resolution transmission electron microscopy and photoluminescence measurements, the correlation between the orientation degree and photoluminescence was investigated. It was suggested that the defects induced in large-angle grain boundaries were possibly responsible for the enhanced non-band-edge emission.
| Original language | English |
|---|---|
| Pages (from-to) | 1785-1790 |
| Number of pages | 6 |
| Journal | Diamond and Related Materials |
| Volume | 17 |
| Issue number | 7-10 |
| DOIs | |
| State | Published - Jul 2008 |
| Externally published | Yes |
Keywords
- AlN thin films
- Microstructure
- Orientation degree
- Photoluminescence