Abstract
SrBi2Nb2O9 (SBN) ferroelectric thin films were fabricated using plasma assisted laser deposition (PLD). The band-gap energy was determined to be 3.60 eV. A photoluminescence peak at 0.78 μm was observed whose intensity decreased with decreasing temperature, when excited with subband-gap energy. A mechanism for the observed photoluminescence, a Nb4+ -O- exciton in the NbO6 octahedron was suggested.
| Original language | English |
|---|---|
| Pages (from-to) | 9226-9230 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 93 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1 Jun 2003 |
| Externally published | Yes |