Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process

Pingxiong Yang; Ningsheng Zhou; Lirong Zheng; Huaixian Lu; Chenglu Lin

doi:10.1088/0022-3727/30/4/005

Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process

Pingxiong Yang, Ningsheng Zhou, Lirong Zheng, Huaixian Lu, Chenglu Lin

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Ferroelectric strontium bismuth tantalite (SBT) thin films were fabricated on Pt/Ti/SiO₂/Si substrates using pulsed laser deposition combined with an annealing process. The crystallization and ferroelectric properties were clearly dependent on the annealing conditions. SBT thin films with good crystallization and ferroelectric properties were obtained after annealing at 700°C for 90 min. The films showed high (115) and (008) diffraction peaks. Good ferroelectric properties were obtained from the films; remnant polarization and coercive field were about 10 μm C cm^-2 and 57 kV cm^-1, respectively. No fatigue was observed up to 10¹⁰ switching cycles. The dc leakage current was about 4 × 10^-8 A cm^-2 and the dc breakdown field was 250 kV cm^-1.

Original language	English
Pages (from-to)	527-532
Number of pages	6
Journal	Journal of Physics D: Applied Physics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1088/0022-3727/30/4/005
State	Published - 21 Feb 1997
Externally published	Yes

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title = "Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process",

abstract = "Ferroelectric strontium bismuth tantalite (SBT) thin films were fabricated on Pt/Ti/SiO2/Si substrates using pulsed laser deposition combined with an annealing process. The crystallization and ferroelectric properties were clearly dependent on the annealing conditions. SBT thin films with good crystallization and ferroelectric properties were obtained after annealing at 700°C for 90 min. The films showed high (115) and (008) diffraction peaks. Good ferroelectric properties were obtained from the films; remnant polarization and coercive field were about 10 μm C cm-2 and 57 kV cm-1, respectively. No fatigue was observed up to 1010 switching cycles. The dc leakage current was about 4 × 10-8 A cm-2 and the dc breakdown field was 250 kV cm-1.",

author = "Pingxiong Yang and Ningsheng Zhou and Lirong Zheng and Huaixian Lu and Chenglu Lin",

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TY - JOUR

T1 - Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process

AU - Yang, Pingxiong

AU - Zhou, Ningsheng

AU - Zheng, Lirong

AU - Lu, Huaixian

AU - Lin, Chenglu

PY - 1997/2/21

Y1 - 1997/2/21

N2 - Ferroelectric strontium bismuth tantalite (SBT) thin films were fabricated on Pt/Ti/SiO2/Si substrates using pulsed laser deposition combined with an annealing process. The crystallization and ferroelectric properties were clearly dependent on the annealing conditions. SBT thin films with good crystallization and ferroelectric properties were obtained after annealing at 700°C for 90 min. The films showed high (115) and (008) diffraction peaks. Good ferroelectric properties were obtained from the films; remnant polarization and coercive field were about 10 μm C cm-2 and 57 kV cm-1, respectively. No fatigue was observed up to 1010 switching cycles. The dc leakage current was about 4 × 10-8 A cm-2 and the dc breakdown field was 250 kV cm-1.

AB - Ferroelectric strontium bismuth tantalite (SBT) thin films were fabricated on Pt/Ti/SiO2/Si substrates using pulsed laser deposition combined with an annealing process. The crystallization and ferroelectric properties were clearly dependent on the annealing conditions. SBT thin films with good crystallization and ferroelectric properties were obtained after annealing at 700°C for 90 min. The films showed high (115) and (008) diffraction peaks. Good ferroelectric properties were obtained from the films; remnant polarization and coercive field were about 10 μm C cm-2 and 57 kV cm-1, respectively. No fatigue was observed up to 1010 switching cycles. The dc leakage current was about 4 × 10-8 A cm-2 and the dc breakdown field was 250 kV cm-1.

UR - https://www.scopus.com/pages/publications/0031076570

U2 - 10.1088/0022-3727/30/4/005

DO - 10.1088/0022-3727/30/4/005

M3 - 文章

AN - SCOPUS:0031076570

SN - 0022-3727

VL - 30

SP - 527

EP - 532

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 4

ER -

Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process

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