Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method

Tantan Liu; Hongmei Deng; Pingxiong Yang; Jun Zhang; Huiyi Cao; Jun He; Junhao Chu

doi:10.1117/12.2053508

Growth and characterization of Sb₂Te₃ thin film deposited by pulsed laser method

Tantan Liu, Hongmei Deng, Pingxiong Yang^*, Jun Zhang, Huiyi Cao, Jun He, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Sb₂Te₃ film was deposited on glass substrates which were heated at 180 °C by pulsed laser deposition (PLD) process using Sb ₂Te₃ target. The crystal structure and crystallization behavior of Sb₂Te₃ film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb₂Te₃ thin film was crystallized well when the substrate temperature (T_sub) was 180 °C, which indicated that Sb₂Te₃ thin film can be fabricated by PLD at suitable temperature.

Original language	English
Title of host publication	Eighth International Conference on Thin Film Physics and Applications
DOIs	https://doi.org/10.1117/12.2053508
State	Published - 2013
Event	8th International Conference on Thin Film Physics and Applications, TFPA 2013 - Shanghai, China Duration: 20 Sep 2013 → 23 Sep 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9068
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	8th International Conference on Thin Film Physics and Applications, TFPA 2013
Country/Territory	China
City	Shanghai
Period	20/09/13 → 23/09/13

Keywords

Pulsed laser method
SbTe
Structure and crystallization

Access to Document

10.1117/12.2053508

Cite this

@inproceedings{781689dc35f3490c915b29db9e80fe0d,

title = "Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method",

abstract = "Sb2Te3 film was deposited on glass substrates which were heated at 180 °C by pulsed laser deposition (PLD) process using Sb 2Te3 target. The crystal structure and crystallization behavior of Sb2Te3 film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb2Te3 thin film was crystallized well when the substrate temperature (Tsub) was 180 °C, which indicated that Sb2Te3 thin film can be fabricated by PLD at suitable temperature.",

keywords = "Pulsed laser method, SbTe, Structure and crystallization",

author = "Tantan Liu and Hongmei Deng and Pingxiong Yang and Jun Zhang and Huiyi Cao and Jun He and Junhao Chu",

year = "2013",

doi = "10.1117/12.2053508",

language = "英语",

isbn = "9780819499974",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Eighth International Conference on Thin Film Physics and Applications",

note = "8th International Conference on Thin Film Physics and Applications, TFPA 2013 ; Conference date: 20-09-2013 Through 23-09-2013",

}

Liu, T, Deng, H, Yang, P, Zhang, J, Cao, H, He, J & Chu, J 2013, Growth and characterization of Sb₂Te₃ thin film deposited by pulsed laser method. in Eighth International Conference on Thin Film Physics and Applications., 90681E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9068, 8th International Conference on Thin Film Physics and Applications, TFPA 2013, Shanghai, China, 20/09/13. https://doi.org/10.1117/12.2053508

Growth and characterization of Sb₂Te₃ thin film deposited by pulsed laser method. / Liu, Tantan; Deng, Hongmei; Yang, Pingxiong et al.
Eighth International Conference on Thin Film Physics and Applications. 2013. 90681E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9068).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method

AU - Liu, Tantan

AU - Deng, Hongmei

AU - Yang, Pingxiong

AU - Zhang, Jun

AU - Cao, Huiyi

AU - He, Jun

AU - Chu, Junhao

PY - 2013

Y1 - 2013

N2 - Sb2Te3 film was deposited on glass substrates which were heated at 180 °C by pulsed laser deposition (PLD) process using Sb 2Te3 target. The crystal structure and crystallization behavior of Sb2Te3 film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb2Te3 thin film was crystallized well when the substrate temperature (Tsub) was 180 °C, which indicated that Sb2Te3 thin film can be fabricated by PLD at suitable temperature.

AB - Sb2Te3 film was deposited on glass substrates which were heated at 180 °C by pulsed laser deposition (PLD) process using Sb 2Te3 target. The crystal structure and crystallization behavior of Sb2Te3 film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb2Te3 thin film was crystallized well when the substrate temperature (Tsub) was 180 °C, which indicated that Sb2Te3 thin film can be fabricated by PLD at suitable temperature.

KW - Pulsed laser method

KW - SbTe

KW - Structure and crystallization

UR - https://www.scopus.com/pages/publications/84891601741

U2 - 10.1117/12.2053508

DO - 10.1117/12.2053508

M3 - 会议稿件

AN - SCOPUS:84891601741

SN - 9780819499974

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Eighth International Conference on Thin Film Physics and Applications

T2 - 8th International Conference on Thin Film Physics and Applications, TFPA 2013

Y2 - 20 September 2013 through 23 September 2013

ER -