Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films

B. Li; X. Q. Chen; J. H. Chu; J. Y. Cao; J. Q. Zhu; D. Y. Tang

doi:10.1016/0040-6090(95)08122-4

Growth and characterization of liquid-phase epitaxial Hg_1-xCd_xTe films

B. Li^*
, X. Q. Chen
, J. H. Chu
, J. Y. Cao
, J. Q. Zhu
, D. Y. Tang

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this paper, we report the liquid-phase epitaxy growth of Hg_1-xCd_xTe films from Te-rich solution in a vertical dipping reactor system. X-ray double-crystal diffraction, IR transmittance spectra and Hall measurement are carried out to characterize the quality of epilayers. By optimizing some key growth parameters such as vapour pressure, supercooling, cooling rate and stirring frequency, Hg_1-xCd_xTe epilayers in both the 3-5 μm and 8-14 μm ranges were grown with flatness surface and uniform composition (Δx ≤ 0.002). Run-to-run reproducibility of the p-type carrier concentrations after Hg annealing, were in the range of (0.5 ∼ 6) × 10¹⁶ cm^-3, while the mobilities were no less than 180 cm² V^-1 s^-1 at 77 K.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Thin Solid Films
Volume	278
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(95)08122-4
State	Published - 15 May 1996
Externally published	Yes

Keywords

Infrared spectroscopy
Liquid phase epitaxy
Mercury cadmium telluride
X-ray diffraction

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10.1016/0040-6090(95)08122-4

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@article{21dfc2b8e2ab4f33b07aaad84396375a,

title = "Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films",

abstract = "In this paper, we report the liquid-phase epitaxy growth of Hg1-xCdxTe films from Te-rich solution in a vertical dipping reactor system. X-ray double-crystal diffraction, IR transmittance spectra and Hall measurement are carried out to characterize the quality of epilayers. By optimizing some key growth parameters such as vapour pressure, supercooling, cooling rate and stirring frequency, Hg1-xCdxTe epilayers in both the 3-5 μm and 8-14 μm ranges were grown with flatness surface and uniform composition (Δx ≤ 0.002). Run-to-run reproducibility of the p-type carrier concentrations after Hg annealing, were in the range of (0.5 ∼ 6) × 1016 cm-3, while the mobilities were no less than 180 cm2 V-1 s-1 at 77 K.",

keywords = "Infrared spectroscopy, Liquid phase epitaxy, Mercury cadmium telluride, X-ray diffraction",

author = "B. Li and Chen, \{X. Q.\} and Chu, \{J. H.\} and Cao, \{J. Y.\} and Zhu, \{J. Q.\} and Tang, \{D. Y.\}",

year = "1996",

month = may,

day = "15",

doi = "10.1016/0040-6090(95)08122-4",

language = "英语",

volume = "278",

pages = "1--5",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films

AU - Li, B.

AU - Chen, X. Q.

AU - Chu, J. H.

AU - Cao, J. Y.

AU - Zhu, J. Q.

AU - Tang, D. Y.

PY - 1996/5/15

Y1 - 1996/5/15

N2 - In this paper, we report the liquid-phase epitaxy growth of Hg1-xCdxTe films from Te-rich solution in a vertical dipping reactor system. X-ray double-crystal diffraction, IR transmittance spectra and Hall measurement are carried out to characterize the quality of epilayers. By optimizing some key growth parameters such as vapour pressure, supercooling, cooling rate and stirring frequency, Hg1-xCdxTe epilayers in both the 3-5 μm and 8-14 μm ranges were grown with flatness surface and uniform composition (Δx ≤ 0.002). Run-to-run reproducibility of the p-type carrier concentrations after Hg annealing, were in the range of (0.5 ∼ 6) × 1016 cm-3, while the mobilities were no less than 180 cm2 V-1 s-1 at 77 K.

AB - In this paper, we report the liquid-phase epitaxy growth of Hg1-xCdxTe films from Te-rich solution in a vertical dipping reactor system. X-ray double-crystal diffraction, IR transmittance spectra and Hall measurement are carried out to characterize the quality of epilayers. By optimizing some key growth parameters such as vapour pressure, supercooling, cooling rate and stirring frequency, Hg1-xCdxTe epilayers in both the 3-5 μm and 8-14 μm ranges were grown with flatness surface and uniform composition (Δx ≤ 0.002). Run-to-run reproducibility of the p-type carrier concentrations after Hg annealing, were in the range of (0.5 ∼ 6) × 1016 cm-3, while the mobilities were no less than 180 cm2 V-1 s-1 at 77 K.

KW - Infrared spectroscopy

KW - Liquid phase epitaxy

KW - Mercury cadmium telluride

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/0030142608

U2 - 10.1016/0040-6090(95)08122-4

DO - 10.1016/0040-6090(95)08122-4

M3 - 文章

AN - SCOPUS:0030142608

SN - 0040-6090

VL - 278

SP - 1

EP - 5

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Growth and characterization of liquid-phase epitaxial Hg_1-xCd_xTe films

Abstract

Keywords

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