Growth and characterization of Hg_1-xCd_xTe by means of vertical dipping liquid-phase epitaxy

Growth of liquid-phase-epitaxial (LPE) layer Hg_1-xCd_xTe on CdTe or CdZnTe(111) substrate by means of vertical dipping method was reported in this paper. The samples composition X of LPE Hg_1-xCd_xTe is from 0.18 to 0.70 and composition uniformity is 0.001. The thickness and the area of LPE sample are about 20μm and 1.5×2cm² respectively. After annealing for n-type Hg_1-xCd_xTe samples x=0.2, the electron concentration and mobility are about 1×1015cm^-3 and 105cm²v·s at 77 k respectively, and the cavity concentration and mobility are about 2×1016 cm^-3, 300 cm²v·s at 77 k respectively for p-type samples. The half peak width is 90 arc sec. The measurements of infrared spectroscopy, electrical parameters and carrier life-time demonstrate that the sample has good photoelectric properties.