@inproceedings{83417a5a9dd547c19cabcafb1b111f8d,
title = "Growth and characterisation of CdSe:Mn quantum dots",
abstract = "In this paper, we report the optical properties of CdSe:Mn dots grown by Atomic Layer Epitaxy (ALE). The samples were grown on GaAs substrates with a 150nm buffer of ZnSe deposited by normal MBE. CdSe layers of different thicknesses were deposited by ALE and then capped with ZnSe. Quantum dot emission was observed for CdSe layers more than 3 ML thick. Two sets of layers containing dots have been grown which were doped with Mn to give concentrations ranging from one to approximately ten Mn ions per dot. One set was capped for optical studies and the other left uncapped. For the uncapped samples, dot densities of the order of ∼109 cm-2 were measured by Atomic Force Microscopy (AFM) measurements obtained immediately after growth (figure 1).",
author = "X. Tang and B. Urbaszek and Graham, \{T. C.M.\} and Warburton, \{R. J.\} and Prior, \{K. A.\} and Cavenett, \{B. C.\}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",
year = "2002",
doi = "10.1109/MBE.2002.1037858",
language = "英语",
series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "259--260",
booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
address = "美国",
}