Grown mechanism of β-FeSi2 by reactive deposition epitaxy

Lianwei Wang; Chenglu Lin; Qinwo Shen; Rushan Ni; Xiangdong Chen; Shichang Zou; Michael Ostling

Grown mechanism of β-FeSi₂ by reactive deposition epitaxy

Lianwei Wang^*
, Chenglu Lin
, Qinwo Shen
, Rushan Ni
, Xiangdong Chen
, Shichang Zou
, Michael Ostling

^*Corresponding author for this work

Chinese Academy of Sciences

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Grown mechanism of semiconducting β-FeSi₂ film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscope. At initial stage, metastable cubic γ-FeSi₂ phase has been detected on both Si(100) and (111) wafer. A multilayer structure Fe-rich silicide FeSi_1+x/Si has been revealed. During the deposition, β-FeSi₂ only directly formed on top layer at high temperature.

Original language	English
Pages	230-232
Number of pages	3
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 24 Oct 1995 → 28 Oct 1995

Conference

Conference	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
City	Beijing, China
Period	24/10/95 → 28/10/95

Cite this

@conference{3478d4485a954454826eb0fd8eb0ac0b,

title = "Grown mechanism of β-FeSi2 by reactive deposition epitaxy",

abstract = "Grown mechanism of semiconducting β-FeSi2 film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscope. At initial stage, metastable cubic γ-FeSi2 phase has been detected on both Si(100) and (111) wafer. A multilayer structure Fe-rich silicide FeSi1+x/Si has been revealed. During the deposition, β-FeSi2 only directly formed on top layer at high temperature.",

author = "Lianwei Wang and Chenglu Lin and Qinwo Shen and Rushan Ni and Xiangdong Chen and Shichang Zou and Michael Ostling",

year = "1995",

language = "英语",

pages = "230--232",

note = "Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 24-10-1995 Through 28-10-1995",

}

TY - CONF

T1 - Grown mechanism of β-FeSi2 by reactive deposition epitaxy

AU - Wang, Lianwei

AU - Lin, Chenglu

AU - Shen, Qinwo

AU - Ni, Rushan

AU - Chen, Xiangdong

AU - Zou, Shichang

AU - Ostling, Michael

PY - 1995

Y1 - 1995

N2 - Grown mechanism of semiconducting β-FeSi2 film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscope. At initial stage, metastable cubic γ-FeSi2 phase has been detected on both Si(100) and (111) wafer. A multilayer structure Fe-rich silicide FeSi1+x/Si has been revealed. During the deposition, β-FeSi2 only directly formed on top layer at high temperature.

AB - Grown mechanism of semiconducting β-FeSi2 film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscope. At initial stage, metastable cubic γ-FeSi2 phase has been detected on both Si(100) and (111) wafer. A multilayer structure Fe-rich silicide FeSi1+x/Si has been revealed. During the deposition, β-FeSi2 only directly formed on top layer at high temperature.

UR - https://www.scopus.com/pages/publications/0029463035

M3 - 论文

AN - SCOPUS:0029463035

SP - 230

EP - 232

T2 - Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 24 October 1995 through 28 October 1995

ER -

Grown mechanism of β-FeSi₂ by reactive deposition epitaxy

Abstract

Conference

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