Ground state energy of the energy of the electron subband in p-type HgCdTe inversion layer

By using a modified self-consistent variation method, the subband structures of n-type inversion layer in p-type HgCdTe MIS (metal-insulator-semiconductor) devices were calculated and the ground subband energy and its dependence on both the doping concentration in bulk HgCdTe and the surface electron concentration in the inversion layer were obtained. In the treatment, the influence of non-parabolic band structure due to the interaction between the conduction band and the valence band, the Zener tunneling, the resonant states as well as the screening effect of the surface electric field were considered. A simple and useful formula for calculating ground state energy was presented. The calculated results are in good agreement with experimental data.