Great enhancement of near band-edge emission of ZnSe two-dimensional complex nanostructures fabricated by the interference of three femtosecond laser beams

Jia Pan; Tianqing Jia; Yanyan Huo; Xin Jia; Donghai Feng; Shian Zhang; Zhenrong Sun; Zhizhan Xu

doi:10.1063/1.4820462

Great enhancement of near band-edge emission of ZnSe two-dimensional complex nanostructures fabricated by the interference of three femtosecond laser beams

Jia Pan, Tianqing Jia, Yanyan Huo, Xin Jia, Donghai Feng, Shian Zhang, Zhenrong Sun, Zhizhan Xu

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

By using the method of the interference of three 800 nm femtosecond laser beams, we fabricated complex 2-dimensional (2D) micro/nanostructures on ZnSe crystal. Compared with the plane surface of ZnSe crystal, 2D nanostructures exhibit a great enhancement of near band-edge (NBE) emission and a compression of second harmonic generation (SHG) under excitation of infrared (IR) femtosecond laser with central wavelengths ranging from 1200 to 1600 nm. We studied the photoluminescence properties of 2D nanostructures and the mechanism of the enhancement of NBE emission. Our results indicated that the enhancement of NBE emission is caused by a combination of several processes including the increase in optical absorption, and the reabsorption of SHG by the nanostructures.

Original language	English
Article number	093102
Journal	Journal of Applied Physics
Volume	114
Issue number	9
DOIs	https://doi.org/10.1063/1.4820462
State	Published - 7 Sep 2013

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title = "Great enhancement of near band-edge emission of ZnSe two-dimensional complex nanostructures fabricated by the interference of three femtosecond laser beams",

abstract = "By using the method of the interference of three 800 nm femtosecond laser beams, we fabricated complex 2-dimensional (2D) micro/nanostructures on ZnSe crystal. Compared with the plane surface of ZnSe crystal, 2D nanostructures exhibit a great enhancement of near band-edge (NBE) emission and a compression of second harmonic generation (SHG) under excitation of infrared (IR) femtosecond laser with central wavelengths ranging from 1200 to 1600 nm. We studied the photoluminescence properties of 2D nanostructures and the mechanism of the enhancement of NBE emission. Our results indicated that the enhancement of NBE emission is caused by a combination of several processes including the increase in optical absorption, and the reabsorption of SHG by the nanostructures.",

author = "Jia Pan and Tianqing Jia and Yanyan Huo and Xin Jia and Donghai Feng and Shian Zhang and Zhenrong Sun and Zhizhan Xu",

year = "2013",

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doi = "10.1063/1.4820462",

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T1 - Great enhancement of near band-edge emission of ZnSe two-dimensional complex nanostructures fabricated by the interference of three femtosecond laser beams

AU - Pan, Jia

AU - Jia, Tianqing

AU - Huo, Yanyan

AU - Jia, Xin

AU - Feng, Donghai

AU - Zhang, Shian

AU - Sun, Zhenrong

AU - Xu, Zhizhan

PY - 2013/9/7

Y1 - 2013/9/7

N2 - By using the method of the interference of three 800 nm femtosecond laser beams, we fabricated complex 2-dimensional (2D) micro/nanostructures on ZnSe crystal. Compared with the plane surface of ZnSe crystal, 2D nanostructures exhibit a great enhancement of near band-edge (NBE) emission and a compression of second harmonic generation (SHG) under excitation of infrared (IR) femtosecond laser with central wavelengths ranging from 1200 to 1600 nm. We studied the photoluminescence properties of 2D nanostructures and the mechanism of the enhancement of NBE emission. Our results indicated that the enhancement of NBE emission is caused by a combination of several processes including the increase in optical absorption, and the reabsorption of SHG by the nanostructures.

AB - By using the method of the interference of three 800 nm femtosecond laser beams, we fabricated complex 2-dimensional (2D) micro/nanostructures on ZnSe crystal. Compared with the plane surface of ZnSe crystal, 2D nanostructures exhibit a great enhancement of near band-edge (NBE) emission and a compression of second harmonic generation (SHG) under excitation of infrared (IR) femtosecond laser with central wavelengths ranging from 1200 to 1600 nm. We studied the photoluminescence properties of 2D nanostructures and the mechanism of the enhancement of NBE emission. Our results indicated that the enhancement of NBE emission is caused by a combination of several processes including the increase in optical absorption, and the reabsorption of SHG by the nanostructures.

UR - https://www.scopus.com/pages/publications/84884914362

U2 - 10.1063/1.4820462

DO - 10.1063/1.4820462

M3 - 文章

AN - SCOPUS:84884914362

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 093102

ER -

Great enhancement of near band-edge emission of ZnSe two-dimensional complex nanostructures fabricated by the interference of three femtosecond laser beams

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