TY - JOUR
T1 - Graphene/Silicon-on-Insulator Heterogenous Cascode Amplifier With High Gain
AU - Tian, Tian
AU - Zhang, Jinshu
AU - Xiao, Kai
AU - Chen, Yingxin
AU - Zhu, Yuxuan
AU - Zhou, Peng
AU - Bao, Wenzhong
AU - Chu, Junhao
AU - Wan, Jing
N1 - Publisher Copyright:
© 1980-2012 IEEE.
PY - 2024
Y1 - 2024
N2 - Although graphene field-effect transistors (GFET) exhibit high carrier mobility and transconductance, they suffer from low output resistance, resulting in limited voltage and power gain. In this study, a heterogenous process is developed to integrate single-layer graphene with silicon-on-insulator (SOI) substrate, then achieving a groundbreaking high-gain cascode amplifier. By combining the advantages of high transconductance from GFET and high output resistance from SOI-FET, the heterogenous cascode amplifier shows high output resistance and high voltage gain. Moreover, the heterogenous cascode amplifier demonstrates a significant improvement in transconductance (12.6 times of SOI-FET) and output resistance (98.7 times of GFET). A maximum gain of up to 80 is obtained by optimizing the bias conditions, vastly exceeding that of standalone GFET and SOI-FET devices. This graphene/SOI heterogenous cascode amplifier exhibits promising applications in radio-frequency transistor technology and wireless communication.
AB - Although graphene field-effect transistors (GFET) exhibit high carrier mobility and transconductance, they suffer from low output resistance, resulting in limited voltage and power gain. In this study, a heterogenous process is developed to integrate single-layer graphene with silicon-on-insulator (SOI) substrate, then achieving a groundbreaking high-gain cascode amplifier. By combining the advantages of high transconductance from GFET and high output resistance from SOI-FET, the heterogenous cascode amplifier shows high output resistance and high voltage gain. Moreover, the heterogenous cascode amplifier demonstrates a significant improvement in transconductance (12.6 times of SOI-FET) and output resistance (98.7 times of GFET). A maximum gain of up to 80 is obtained by optimizing the bias conditions, vastly exceeding that of standalone GFET and SOI-FET devices. This graphene/SOI heterogenous cascode amplifier exhibits promising applications in radio-frequency transistor technology and wireless communication.
KW - Cascode amplifier
KW - graphene field effect transistor
KW - heterogenous process
KW - high gain
KW - silicon-on-insulator
UR - https://www.scopus.com/pages/publications/85204982623
U2 - 10.1109/LED.2024.3464647
DO - 10.1109/LED.2024.3464647
M3 - 文章
AN - SCOPUS:85204982623
SN - 0741-3106
VL - 45
SP - 2209
EP - 2212
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 11
ER -