Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

Yan Liu; Jiqing Wang; Huaizhong Xing; Naiyun Tang; Bin Lv; Huibing Mao; Qiang Zhao; Yong Zhang; Ziqiang Zhu

doi:10.1016/j.ssc.2008.10.025

Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

Yan Liu
, Jiqing Wang^*
, Huaizhong Xing
, Naiyun Tang
, Bin Lv
, Huibing Mao
, Qiang Zhao
, Yong Zhang
, Ziqiang Zhu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure.

Original language	English
Pages (from-to)	156-159
Number of pages	4
Journal	Solid State Communications
Volume	149
Issue number	3-4
DOIs	https://doi.org/10.1016/j.ssc.2008.10.025
State	Published - Jan 2009

Keywords

A. GaMnN
C. Resonant-tunneling diode
D. Magnetocurrents

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10.1016/j.ssc.2008.10.025

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title = "Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations",

abstract = "The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure.",

keywords = "A. GaMnN, C. Resonant-tunneling diode, D. Magnetocurrents",

author = "Yan Liu and Jiqing Wang and Huaizhong Xing and Naiyun Tang and Bin Lv and Huibing Mao and Qiang Zhao and Yong Zhang and Ziqiang Zhu",

year = "2009",

month = jan,

doi = "10.1016/j.ssc.2008.10.025",

language = "英语",

volume = "149",

pages = "156--159",

journal = "Solid State Communications",

issn = "0038-1098",

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number = "3-4",

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TY - JOUR

T1 - Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

AU - Liu, Yan

AU - Wang, Jiqing

AU - Xing, Huaizhong

AU - Tang, Naiyun

AU - Lv, Bin

AU - Mao, Huibing

AU - Zhao, Qiang

AU - Zhang, Yong

AU - Zhu, Ziqiang

PY - 2009/1

Y1 - 2009/1

N2 - The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure.

AB - The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure.

KW - A. GaMnN

KW - C. Resonant-tunneling diode

KW - D. Magnetocurrents

UR - https://www.scopus.com/pages/publications/57649087489

U2 - 10.1016/j.ssc.2008.10.025

DO - 10.1016/j.ssc.2008.10.025

M3 - 文章

AN - SCOPUS:57649087489

SN - 0038-1098

VL - 149

SP - 156

EP - 159

JO - Solid State Communications

JF - Solid State Communications

IS - 3-4

ER -

Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

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Keywords

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