Abstract
Spintronics rooted in the spin degree of freedom is of both theoretical and technological importance. The development of some fantastic properties for electrically controlling this degree of freedom encourages enormous effort to the research on magnetic systems which possess sensitive magnetic response to the electric field. Here, a giant flexomagnetoelectric effect is predicted in a typical dilute magnetic monolayer Mn-doped MoS2. Combining lattice bending and magnetic doping, it is shown that the magnetic response and magnetic anisotropy can be greatly amplified under the applied electric field. Further investigations reveal that such an effect stems from the orbit-dependent response of the single magnetic dopant. Physically, the electric field-induced orbital polarization causes the spatial distribution change of the Mn-3d orbital wavefunction, which is sensitive to the change of the orbital hybridization with the bent lattice. Hence the corresponding 3d energy levels can be controlled to shift near Fermi level via external electric field. These findings open a new route toward functional 2D materials design for flexible devices.
| Original language | English |
|---|---|
| Article number | 1800048 |
| Journal | Advanced Theory and Simulations |
| Volume | 1 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1 Aug 2018 |
Keywords
- DFT calculations
- dilute magnetic monolayers
- flexible spintronics
- magnetocrystalline anisotropy
- orbital response