Germanium nitride as a buffer layer for phase change memory

Xu Zhang; Bo Liu; Cheng Peng; Feng Rao; Xi Lin Zhou; San Nian Song; Liang Yong Wang; Yan Cheng; Liang Cai Wu; Dong Ning Yao; Zhi Tang Song; Song Lin Feng

doi:10.1088/0256-307X/29/10/107201

Germanium nitride as a buffer layer for phase change memory

Xu Zhang
, Bo Liu^*
, Cheng Peng
, Feng Rao
, Xi Lin Zhou
, San Nian Song
, Liang Yong Wang
, Yan Cheng
, Liang Cai Wu
, Dong Ning Yao
, Zhi Tang Song
, Song Lin Feng

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented. It is found that the adhesive strength between the Ge₂Sb₂Te₅(GST) layer and the layer below could be increased at least 20 times, which is beneficial for solving the phase change material peeling issue in the fabrication process of phase change memory (PCM). Meanwhile, the RESET voltage of the PCM cell with a 3-nm-thick GeN buffer layer can be reduced from 3.5 V to 2.2 V. The GeN buffer layer will play an important role in high density and low power consumption PCM applications.

Original language	English
Article number	107201
Journal	Chinese Physics Letters
Volume	29
Issue number	10
DOIs	https://doi.org/10.1088/0256-307X/29/10/107201
State	Published - Oct 2012
Externally published	Yes

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title = "Germanium nitride as a buffer layer for phase change memory",

abstract = "The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented. It is found that the adhesive strength between the Ge2Sb2Te5(GST) layer and the layer below could be increased at least 20 times, which is beneficial for solving the phase change material peeling issue in the fabrication process of phase change memory (PCM). Meanwhile, the RESET voltage of the PCM cell with a 3-nm-thick GeN buffer layer can be reduced from 3.5 V to 2.2 V. The GeN buffer layer will play an important role in high density and low power consumption PCM applications.",

author = "Xu Zhang and Bo Liu and Cheng Peng and Feng Rao and Zhou, \{Xi Lin\} and Song, \{San Nian\} and Wang, \{Liang Yong\} and Yan Cheng and Wu, \{Liang Cai\} and Yao, \{Dong Ning\} and Song, \{Zhi Tang\} and Feng, \{Song Lin\}",

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month = oct,

doi = "10.1088/0256-307X/29/10/107201",

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volume = "29",

journal = "Chinese Physics Letters",

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T1 - Germanium nitride as a buffer layer for phase change memory

AU - Zhang, Xu

AU - Liu, Bo

AU - Peng, Cheng

AU - Rao, Feng

AU - Zhou, Xi Lin

AU - Song, San Nian

AU - Wang, Liang Yong

AU - Cheng, Yan

AU - Wu, Liang Cai

AU - Yao, Dong Ning

AU - Song, Zhi Tang

AU - Feng, Song Lin

PY - 2012/10

Y1 - 2012/10

N2 - The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented. It is found that the adhesive strength between the Ge2Sb2Te5(GST) layer and the layer below could be increased at least 20 times, which is beneficial for solving the phase change material peeling issue in the fabrication process of phase change memory (PCM). Meanwhile, the RESET voltage of the PCM cell with a 3-nm-thick GeN buffer layer can be reduced from 3.5 V to 2.2 V. The GeN buffer layer will play an important role in high density and low power consumption PCM applications.

AB - The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented. It is found that the adhesive strength between the Ge2Sb2Te5(GST) layer and the layer below could be increased at least 20 times, which is beneficial for solving the phase change material peeling issue in the fabrication process of phase change memory (PCM). Meanwhile, the RESET voltage of the PCM cell with a 3-nm-thick GeN buffer layer can be reduced from 3.5 V to 2.2 V. The GeN buffer layer will play an important role in high density and low power consumption PCM applications.

UR - https://www.scopus.com/pages/publications/84867482723

U2 - 10.1088/0256-307X/29/10/107201

DO - 10.1088/0256-307X/29/10/107201

M3 - 文章

AN - SCOPUS:84867482723

SN - 0256-307X

VL - 29

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 10

M1 - 107201

ER -

Germanium nitride as a buffer layer for phase change memory

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