GaSb quantum dots growth by liquid phase epitaxy

Shu Hong Hu; Feng Qiu; Ying Fei Lv; Chang Hong Sun; Qi Wei Wang; Jian Hua Guo; Hui Yong Deng; Ning Dai; Qian Dong Zhuang; Min Yin; Anthony Krier

doi:10.3724/SP.J.1010.2013.00220

GaSb quantum dots growth by liquid phase epitaxy

Shu Hong Hu^*
, Feng Qiu
, Ying Fei Lv
, Chang Hong Sun
, Qi Wei Wang
, Jian Hua Guo
, Hui Yong Deng
, Ning Dai
, Qian Dong Zhuang
, Min Yin
, Anthony Krier

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

Original language	English
Pages (from-to)	220-224
Number of pages	5
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	32
Issue number	3
DOIs	https://doi.org/10.3724/SP.J.1010.2013.00220
State	Published - Jun 2013
Externally published	Yes

Keywords

Atomic force microscopy
GaSb quantum dots
Liquid Phase Epitaxy
Type-II QDs structure

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10.3724/SP.J.1010.2013.00220

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title = "GaSb quantum dots growth by liquid phase epitaxy",

abstract = "The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.",

keywords = "Atomic force microscopy, GaSb quantum dots, Liquid Phase Epitaxy, Type-II QDs structure",

author = "Hu, \{Shu Hong\} and Feng Qiu and Lv, \{Ying Fei\} and Sun, \{Chang Hong\} and Wang, \{Qi Wei\} and Guo, \{Jian Hua\} and Deng, \{Hui Yong\} and Ning Dai and Zhuang, \{Qian Dong\} and Min Yin and Anthony Krier",

year = "2013",

month = jun,

doi = "10.3724/SP.J.1010.2013.00220",

language = "英语",

volume = "32",

pages = "220--224",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

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TY - JOUR

T1 - GaSb quantum dots growth by liquid phase epitaxy

AU - Hu, Shu Hong

AU - Qiu, Feng

AU - Lv, Ying Fei

AU - Sun, Chang Hong

AU - Wang, Qi Wei

AU - Guo, Jian Hua

AU - Deng, Hui Yong

AU - Dai, Ning

AU - Zhuang, Qian Dong

AU - Yin, Min

AU - Krier, Anthony

PY - 2013/6

Y1 - 2013/6

N2 - The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

AB - The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

KW - Atomic force microscopy

KW - GaSb quantum dots

KW - Liquid Phase Epitaxy

KW - Type-II QDs structure

UR - https://www.scopus.com/pages/publications/84880029838

U2 - 10.3724/SP.J.1010.2013.00220

DO - 10.3724/SP.J.1010.2013.00220

M3 - 文章

AN - SCOPUS:84880029838

SN - 1001-9014

VL - 32

SP - 220

EP - 224

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 3

ER -

GaSb quantum dots growth by liquid phase epitaxy

Abstract

Keywords

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