GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application

Ao Zhang; Xiaolin Hao; Jianjun Gao

doi:10.1109/TED.2024.3376311

GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application

Ao Zhang
, Xiaolin Hao^*
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Nantong University
East China Normal University
Hebei Semiconductor Research Institute

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and {S} -parameters for GaN Schottky diodes.

Original language	English
Pages (from-to)	2925-2930
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	5
DOIs	https://doi.org/10.1109/TED.2024.3376311
State	Published - 1 May 2024

Keywords

Diode
large signal model
parameter extraction
semiconductor device modeling

Access to Document

10.1109/TED.2024.3376311

Cite this

@article{22cbdd596e484564a0ead6c9be37bb73,

title = "GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application",

abstract = "A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and \{S\} -parameters for GaN Schottky diodes.",

keywords = "Diode, large signal model, parameter extraction, semiconductor device modeling",

author = "Ao Zhang and Xiaolin Hao and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

month = may,

day = "1",

doi = "10.1109/TED.2024.3376311",

language = "英语",

volume = "71",

pages = "2925--2930",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application

AU - Zhang, Ao

AU - Hao, Xiaolin

AU - Gao, Jianjun

PY - 2024/5/1

Y1 - 2024/5/1

N2 - A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and {S} -parameters for GaN Schottky diodes.

AB - A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and {S} -parameters for GaN Schottky diodes.

KW - Diode

KW - large signal model

KW - parameter extraction

KW - semiconductor device modeling

UR - https://www.scopus.com/pages/publications/85188452489

U2 - 10.1109/TED.2024.3376311

DO - 10.1109/TED.2024.3376311

M3 - 文章

AN - SCOPUS:85188452489

SN - 0018-9383

VL - 71

SP - 2925

EP - 2930

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this