GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique

Xiaolin Hao; Ao Zhang; Guodong Gu; Shixiong Liang; Xubo Song; Lisen Zhang; Peng Xu; Jianjun Gao; Zhihong Feng

doi:10.1109/TTHZ.2024.3481959

GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique

Xiaolin Hao
, Ao Zhang^*
, Guodong Gu
, Shixiong Liang
, Xubo Song
, Lisen Zhang
, Peng Xu
, Jianjun Gao
, Zhihong Feng^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The on-state and off-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.

Original language	English
Pages (from-to)	100-106
Number of pages	7
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	15
Issue number	1
DOIs	https://doi.org/10.1109/TTHZ.2024.3481959
State	Published - 2025

Keywords

Equivalent circuit model
GaAs PIN diode
parameter extraction
subterahertz switch

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10.1109/TTHZ.2024.3481959

Cite this

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title = "GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique",

abstract = "GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The on-state and off-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.",

keywords = "Equivalent circuit model, GaAs PIN diode, parameter extraction, subterahertz switch",

author = "Xiaolin Hao and Ao Zhang and Guodong Gu and Shixiong Liang and Xubo Song and Lisen Zhang and Peng Xu and Jianjun Gao and Zhihong Feng",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2025",

doi = "10.1109/TTHZ.2024.3481959",

language = "英语",

volume = "15",

pages = "100--106",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-342X",

publisher = "IEEE Microwave Theory and Techniques Society",

number = "1",

}

TY - JOUR

T1 - GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique

AU - Hao, Xiaolin

AU - Zhang, Ao

AU - Gu, Guodong

AU - Liang, Shixiong

AU - Song, Xubo

AU - Zhang, Lisen

AU - Xu, Peng

AU - Gao, Jianjun

AU - Feng, Zhihong

PY - 2025

Y1 - 2025

N2 - GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The on-state and off-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.

AB - GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The on-state and off-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.

KW - Equivalent circuit model

KW - GaAs PIN diode

KW - parameter extraction

KW - subterahertz switch

UR - https://www.scopus.com/pages/publications/85207705224

U2 - 10.1109/TTHZ.2024.3481959

DO - 10.1109/TTHZ.2024.3481959

M3 - 文章

AN - SCOPUS:85207705224

SN - 2156-342X

VL - 15

SP - 100

EP - 106

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 1

ER -

GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique

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Keywords

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