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From CuFeS2 to Ba6Cu2FeGe4S16: Rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold

  • Wangzhu Cao
  • , Dajiang Mei*
  • , Yi Yang
  • , Yuanwang Wu
  • , Lingyun Zhang
  • , Yuandong Wu
  • , Xiao He
  • , Zheshuai Lin
  • , Fuqiang Huang
  • *Corresponding author for this work
  • Shanghai University of Engineering Science
  • CAS - Technical Institute of Physics and Chemistry
  • University of Chinese Academy of Sciences
  • East China University of Science and Technology
  • CAS - Shanghai Institute of Ceramics

Research output: Contribution to journalArticlepeer-review

Abstract

A new germanium-based sulfide, Ba6Cu2FeGe4S16, achieves a band-gap broadening of more than 1 eV relative to CuFeS2. Remarkably, Ba6Cu2FeGe4S16 exhibits excellent comprehensive NLO performance (SHG, 1.5 × AgGaSe2; LDT, 2 × AgGaSe2), satisfying the essential requirements of mid-IR NLO candidates.

Original languageEnglish
Pages (from-to)14510-14513
Number of pages4
JournalChemical Communications
Volume55
Issue number96
DOIs
StatePublished - 2019

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