Formation of the copper nano-particles in porous silicon by electroplating

  • Xiao Feng*
  • , Shaohui Xu
  • , Shaoqiang Chen
  • , Jianzhong Zhu
  • , Ziqiang Zhu
  • , Zongsheng Lai
  • *Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A cheap and simple method of depositing copper into porous silicon by cathode electroplating was described. The existence of cubic copper nano-particles (∼30nm) into porous silicon matrix was verified by X-ray Diffraction and Scanning Electron Microscopy. The microcrystal size of porous silicon and strain between porous silicon and copper layer were discussed based on the Raman spectra.

Original languageEnglish
Article number131
Pages (from-to)563-566
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5774
DOIs
StatePublished - 2005
EventFifth International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: 31 May 20042 Jun 2004

Keywords

  • Cathode electroplating
  • Copper nano-particles
  • Porous silicon

Fingerprint

Dive into the research topics of 'Formation of the copper nano-particles in porous silicon by electroplating'. Together they form a unique fingerprint.

Cite this