Abstract
A cheap and simple method of depositing copper into porous silicon by cathode electroplating was described. The existence of cubic copper nano-particles (∼30nm) into porous silicon matrix was verified by X-ray Diffraction and Scanning Electron Microscopy. The microcrystal size of porous silicon and strain between porous silicon and copper layer were discussed based on the Raman spectra.
| Original language | English |
|---|---|
| Article number | 131 |
| Pages (from-to) | 563-566 |
| Number of pages | 4 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5774 |
| DOIs | |
| State | Published - 2005 |
| Event | Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004 |
Keywords
- Cathode electroplating
- Copper nano-particles
- Porous silicon