Formation of selective porous silicon array using boron ion implantation

According to the different porous silicon fabricating process of p-type and n-type silicon substrate, a new technology of boron ion implantation to form a selective p-type array on n-type substrate is introduced. After electrochemical etching process, a selective porous silicon is obtained. By this way, the defects of the conventional mask technology are avoided. The selective porous silicon array is characterized by AFM and SEM.