Flexible Solar-Blind Photodetectors Based on β-Ga2O3 Films Transferred by a Stamp-Based Printing Technique

Xin Zhou; Ming Li; Jinzhong Zhang; Liyan Shang; Kai Jiang; Yawei Li; Liangqing Zhu; Junhao Chu; Zhigao Hu

doi:10.1109/LED.2022.3207314

Flexible Solar-Blind Photodetectors Based on β-Ga₂O₃ Films Transferred by a Stamp-Based Printing Technique

Xin Zhou
, Ming Li
, Jinzhong Zhang
, Liyan Shang
, Kai Jiang
, Yawei Li
, Liangqing Zhu^*
, Junhao Chu
, Zhigao Hu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A stamp-based printing technique was applied to transfer the β-Ga₂O₃ films grown by pulsed laser deposition (PLD) from Si substrates onto some flexible substrates, such as PET, PEN, and PI. It is demonstrated that the β-Ga₂O₃-based flexible solar-blind photodetectors (SBPDs) exhibit brilliant optoelectrical performances with a low dark current of 1.7 pA at 10 V, a I_254nm/I_dark ratio of 1.2 × 10³, rise (τ_r₁ = 0.079 s and τ_r₂ = 0.413 s) and decay (τ_d₁ = 0.029 s and τ_d₂ = 0.316 s) times. In a further step, flexible imaging sensor arrays based on the β-Ga₂O₃/PET were fabricated, which exhibit good imaging capability and resolution. Moreover, wearable UVC-alarms based on the β-Ga₂O₃/PET were realized to monitor the UVC radiation in the environment in real time, which can be used in the COVID-19-related area.

Original language	English
Pages (from-to)	1921-1924
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	11
DOIs	https://doi.org/10.1109/LED.2022.3207314
State	Published - 1 Nov 2022
Externally published	Yes

Keywords

flexible solar-blind photodetectors
pulsed laser deposition
stamp-based printing technique
β-GaO films

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10.1109/LED.2022.3207314

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@article{712e12944c824d50bfcfc591159d999a,

title = "Flexible Solar-Blind Photodetectors Based on β-Ga2O3 Films Transferred by a Stamp-Based Printing Technique",

abstract = "A stamp-based printing technique was applied to transfer the β-Ga2O3 films grown by pulsed laser deposition (PLD) from Si substrates onto some flexible substrates, such as PET, PEN, and PI. It is demonstrated that the β-Ga2O3-based flexible solar-blind photodetectors (SBPDs) exhibit brilliant optoelectrical performances with a low dark current of 1.7 pA at 10 V, a I254nm/Idark ratio of 1.2 × 103, rise (τr1 = 0.079 s and τr2 = 0.413 s) and decay (τd1 = 0.029 s and τd2 = 0.316 s) times. In a further step, flexible imaging sensor arrays based on the β-Ga2O3/PET were fabricated, which exhibit good imaging capability and resolution. Moreover, wearable UVC-alarms based on the β-Ga2O3/PET were realized to monitor the UVC radiation in the environment in real time, which can be used in the COVID-19-related area.",

keywords = "flexible solar-blind photodetectors, pulsed laser deposition, stamp-based printing technique, β-GaO films",

author = "Xin Zhou and Ming Li and Jinzhong Zhang and Liyan Shang and Kai Jiang and Yawei Li and Liangqing Zhu and Junhao Chu and Zhigao Hu",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

month = nov,

day = "1",

doi = "10.1109/LED.2022.3207314",

language = "英语",

volume = "43",

pages = "1921--1924",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Flexible Solar-Blind Photodetectors Based on β-Ga2O3 Films Transferred by a Stamp-Based Printing Technique

AU - Zhou, Xin

AU - Li, Ming

AU - Zhang, Jinzhong

AU - Shang, Liyan

AU - Jiang, Kai

AU - Li, Yawei

AU - Zhu, Liangqing

AU - Chu, Junhao

AU - Hu, Zhigao

PY - 2022/11/1

Y1 - 2022/11/1

N2 - A stamp-based printing technique was applied to transfer the β-Ga2O3 films grown by pulsed laser deposition (PLD) from Si substrates onto some flexible substrates, such as PET, PEN, and PI. It is demonstrated that the β-Ga2O3-based flexible solar-blind photodetectors (SBPDs) exhibit brilliant optoelectrical performances with a low dark current of 1.7 pA at 10 V, a I254nm/Idark ratio of 1.2 × 103, rise (τr1 = 0.079 s and τr2 = 0.413 s) and decay (τd1 = 0.029 s and τd2 = 0.316 s) times. In a further step, flexible imaging sensor arrays based on the β-Ga2O3/PET were fabricated, which exhibit good imaging capability and resolution. Moreover, wearable UVC-alarms based on the β-Ga2O3/PET were realized to monitor the UVC radiation in the environment in real time, which can be used in the COVID-19-related area.

AB - A stamp-based printing technique was applied to transfer the β-Ga2O3 films grown by pulsed laser deposition (PLD) from Si substrates onto some flexible substrates, such as PET, PEN, and PI. It is demonstrated that the β-Ga2O3-based flexible solar-blind photodetectors (SBPDs) exhibit brilliant optoelectrical performances with a low dark current of 1.7 pA at 10 V, a I254nm/Idark ratio of 1.2 × 103, rise (τr1 = 0.079 s and τr2 = 0.413 s) and decay (τd1 = 0.029 s and τd2 = 0.316 s) times. In a further step, flexible imaging sensor arrays based on the β-Ga2O3/PET were fabricated, which exhibit good imaging capability and resolution. Moreover, wearable UVC-alarms based on the β-Ga2O3/PET were realized to monitor the UVC radiation in the environment in real time, which can be used in the COVID-19-related area.

KW - flexible solar-blind photodetectors

KW - pulsed laser deposition

KW - stamp-based printing technique

KW - β-GaO films

UR - https://www.scopus.com/pages/publications/85139451606

U2 - 10.1109/LED.2022.3207314

DO - 10.1109/LED.2022.3207314

M3 - 文章

AN - SCOPUS:85139451606

SN - 0741-3106

VL - 43

SP - 1921

EP - 1924

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Flexible Solar-Blind Photodetectors Based on β-Ga₂O₃ Films Transferred by a Stamp-Based Printing Technique

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