Flexible graphene field effect transistor with ferroelectric polymer gate

Xudong Wang; Minghua Tang; Yan Chen; Guangjian Wu; Hai Huang; Xiaolin Zhao; Bobo Tian; Jianlu Wang; Shuo Sun; Hong Shen; Tie Lin; Jinglan Sun; Xiangjian Meng; Junhao Chu

doi:10.1007/s11082-016-0614-y

Flexible graphene field effect transistor with ferroelectric polymer gate

Xudong Wang, Minghua Tang^*, Yan Chen, Guangjian Wu, Hai Huang, Xiaolin Zhao, Bobo Tian, Jianlu Wang, Shuo Sun, Hong Shen, Tie Lin, Jinglan Sun, Xiangjian Meng, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.

Original language	English
Article number	345
Journal	Optical and Quantum Electronics
Volume	48
Issue number	7
DOIs	https://doi.org/10.1007/s11082-016-0614-y
State	Published - 1 Jul 2016
Externally published	Yes

Keywords

CVD graphene
Ferroelectric polymer gating
Flexible electronics
P(VDF-TrFE)

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10.1007/s11082-016-0614-y

Cite this

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title = "Flexible graphene field effect transistor with ferroelectric polymer gate",

abstract = "A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.",

keywords = "CVD graphene, Ferroelectric polymer gating, Flexible electronics, P(VDF-TrFE)",

author = "Xudong Wang and Minghua Tang and Yan Chen and Guangjian Wu and Hai Huang and Xiaolin Zhao and Bobo Tian and Jianlu Wang and Shuo Sun and Hong Shen and Tie Lin and Jinglan Sun and Xiangjian Meng and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2016, Springer Science+Business Media New York.",

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doi = "10.1007/s11082-016-0614-y",

language = "英语",

volume = "48",

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TY - JOUR

T1 - Flexible graphene field effect transistor with ferroelectric polymer gate

AU - Wang, Xudong

AU - Tang, Minghua

AU - Chen, Yan

AU - Wu, Guangjian

AU - Huang, Hai

AU - Zhao, Xiaolin

AU - Tian, Bobo

AU - Wang, Jianlu

AU - Sun, Shuo

AU - Shen, Hong

AU - Lin, Tie

AU - Sun, Jinglan

AU - Meng, Xiangjian

AU - Chu, Junhao

PY - 2016/7/1

Y1 - 2016/7/1

N2 - A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.

AB - A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.

KW - CVD graphene

KW - Ferroelectric polymer gating

KW - Flexible electronics

KW - P(VDF-TrFE)

UR - https://www.scopus.com/pages/publications/84975708741

U2 - 10.1007/s11082-016-0614-y

DO - 10.1007/s11082-016-0614-y

M3 - 文章

AN - SCOPUS:84975708741

SN - 0306-8919

VL - 48

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 7

M1 - 345

ER -

Flexible graphene field effect transistor with ferroelectric polymer gate

Abstract

Keywords

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