First Demonstration of Annealing-Free RT-Prepared AlScN Film with Large Polarization (2P_r>300 μ C/cm²) and Ultra-Sharp E_c Distribution for 0T1C FeRAM

Selector-free 0T1C FeRAM requires ferroelectric (FE) films with high polarization (2P_r) and sharp coercive field (E_c) distribution. In this work, we present the first demonstration of a 1kb 0T1C FeRAM based on the optimized AlScN FE film, through electrode engineering and interface optimization. An annealing-free room-temperature (RT)-prepared AlScN epitaxial film with high-quality (001) orientation is achieved, resulting in a large 2 P_r>300 μ C/cm² and an ultra-sharp E_c distribution (record α of 0.045). The sharp E_c allows superior disturb immunity under the V_dd/2 read scheme for array operations, even at an elevated 300°C. Furthermore, our circuit model proposes that the optimized AlScN FE film can support much larger array size compared to other ferroelectrics, thanks to its enhanced 2 P_r and sharper E_c distribution. This work underscores the great potential of AlScN-based FE films for high-capacity emerging memory technologies.