Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Ke Yu; Wei Ming Wang; Zi Qiang Zhu; Yong Sheng Zhang; Xian Wen Yu; Shao Qiang Chen; Qiong Li; Guang Da Yang; Jian Zhong Zhu; Qun Chen; Wei Lu; Jian Zi

doi:10.1088/0256-307X/21/1/061

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Ke Yu
, Wei Ming Wang
, Zi Qiang Zhu^*
, Yong Sheng Zhang
, Xian Wen Yu
, Shao Qiang Chen
, Qiong Li
, Guang Da Yang
, Jian Zhong Zhu
, Qun Chen
, Wei Lu
, Jian Zi

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5 V/μm at current density of 0.1 μA/cm ² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 9.1 V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	Chinese Physics Letters
Volume	21
Issue number	1
DOIs	https://doi.org/10.1088/0256-307X/21/1/061
State	Published - Jan 2004

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title = "Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation",

abstract = "Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5 V/μm at current density of 0.1 μA/cm 2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 9.1 V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.",

author = "Ke Yu and Wang, \{Wei Ming\} and Zhu, \{Zi Qiang\} and Zhang, \{Yong Sheng\} and Yu, \{Xian Wen\} and Chen, \{Shao Qiang\} and Qiong Li and Yang, \{Guang Da\} and Zhu, \{Jian Zhong\} and Qun Chen and Wei Lu and Jian Zi",

year = "2004",

month = jan,

doi = "10.1088/0256-307X/21/1/061",

language = "英语",

volume = "21",

pages = "203--206",

journal = "Chinese Physics Letters",

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publisher = "IOP Publishing Ltd.",

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TY - JOUR

T1 - Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

AU - Yu, Ke

AU - Wang, Wei Ming

AU - Zhu, Zi Qiang

AU - Zhang, Yong Sheng

AU - Yu, Xian Wen

AU - Chen, Shao Qiang

AU - Li, Qiong

AU - Yang, Guang Da

AU - Zhu, Jian Zhong

AU - Chen, Qun

AU - Lu, Wei

AU - Zi, Jian

PY - 2004/1

Y1 - 2004/1

N2 - Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5 V/μm at current density of 0.1 μA/cm 2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 9.1 V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.

AB - Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5 V/μm at current density of 0.1 μA/cm 2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 9.1 V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.

UR - https://www.scopus.com/pages/publications/0742305845

U2 - 10.1088/0256-307X/21/1/061

DO - 10.1088/0256-307X/21/1/061

M3 - 文章

AN - SCOPUS:0742305845

SN - 0256-307X

VL - 21

SP - 203

EP - 206

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 1

ER -

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

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