Field emission from GaN nanobelts with herringbone morphology

Laiqiang Luo; Ke Yu; Ziqiang Zhu; Yongsheng Zhang; Honglei Ma; Chengshan Xue; Yingge Yang; Shaoqiang Chen

doi:10.1016/j.matlet.2004.05.014

Field emission from GaN nanobelts with herringbone morphology

Laiqiang Luo, Ke Yu, Ziqiang Zhu, Yongsheng Zhang, Honglei Ma, Chengshan Xue, Yingge Yang, Shaoqiang Chen

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Gallium nitride (GaN) nanobelts with herringbone morphology are successfully synthesized on Si (111) substrates through ammoniating Ga ₂O₃ thin films deposited by radiofrequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) and high-resolution TEM (HRTEM) are carried out to analyze as-synthesized GaN nanobelts. The field emission (FE) measurements show that the as-synthesized GaN nanobelts have a very low turn-on field of 6.1 V/μm at the current density of 0.1 μA/cm². It is found that the Fowler-Nordheim (FN) plot exhibits two stages. The experimental results demonstrated that there were great potential applications of the herringbone-like GaN nanobelts for flat panel displays.

Original language	English
Pages (from-to)	2893-2896
Number of pages	4
Journal	Materials Letters
Volume	58
Issue number	22-23
DOIs	https://doi.org/10.1016/j.matlet.2004.05.014
State	Published - Sep 2004

Keywords

Ammoniating
Field emission
GaN nanobelts

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10.1016/j.matlet.2004.05.014

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@article{8111f96fd9874d4582faac1a6611c3a1,

title = "Field emission from GaN nanobelts with herringbone morphology",

abstract = "Gallium nitride (GaN) nanobelts with herringbone morphology are successfully synthesized on Si (111) substrates through ammoniating Ga 2O3 thin films deposited by radiofrequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) and high-resolution TEM (HRTEM) are carried out to analyze as-synthesized GaN nanobelts. The field emission (FE) measurements show that the as-synthesized GaN nanobelts have a very low turn-on field of 6.1 V/μm at the current density of 0.1 μA/cm2. It is found that the Fowler-Nordheim (FN) plot exhibits two stages. The experimental results demonstrated that there were great potential applications of the herringbone-like GaN nanobelts for flat panel displays.",

keywords = "Ammoniating, Field emission, GaN nanobelts",

author = "Laiqiang Luo and Ke Yu and Ziqiang Zhu and Yongsheng Zhang and Honglei Ma and Chengshan Xue and Yingge Yang and Shaoqiang Chen",

year = "2004",

month = sep,

doi = "10.1016/j.matlet.2004.05.014",

language = "英语",

volume = "58",

pages = "2893--2896",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "22-23",

}

TY - JOUR

T1 - Field emission from GaN nanobelts with herringbone morphology

AU - Luo, Laiqiang

AU - Yu, Ke

AU - Zhu, Ziqiang

AU - Zhang, Yongsheng

AU - Ma, Honglei

AU - Xue, Chengshan

AU - Yang, Yingge

AU - Chen, Shaoqiang

PY - 2004/9

Y1 - 2004/9

N2 - Gallium nitride (GaN) nanobelts with herringbone morphology are successfully synthesized on Si (111) substrates through ammoniating Ga 2O3 thin films deposited by radiofrequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) and high-resolution TEM (HRTEM) are carried out to analyze as-synthesized GaN nanobelts. The field emission (FE) measurements show that the as-synthesized GaN nanobelts have a very low turn-on field of 6.1 V/μm at the current density of 0.1 μA/cm2. It is found that the Fowler-Nordheim (FN) plot exhibits two stages. The experimental results demonstrated that there were great potential applications of the herringbone-like GaN nanobelts for flat panel displays.

AB - Gallium nitride (GaN) nanobelts with herringbone morphology are successfully synthesized on Si (111) substrates through ammoniating Ga 2O3 thin films deposited by radiofrequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) and high-resolution TEM (HRTEM) are carried out to analyze as-synthesized GaN nanobelts. The field emission (FE) measurements show that the as-synthesized GaN nanobelts have a very low turn-on field of 6.1 V/μm at the current density of 0.1 μA/cm2. It is found that the Fowler-Nordheim (FN) plot exhibits two stages. The experimental results demonstrated that there were great potential applications of the herringbone-like GaN nanobelts for flat panel displays.

KW - Ammoniating

KW - Field emission

KW - GaN nanobelts

UR - https://www.scopus.com/pages/publications/3242684322

U2 - 10.1016/j.matlet.2004.05.014

DO - 10.1016/j.matlet.2004.05.014

M3 - 文章

AN - SCOPUS:3242684322

SN - 0167-577X

VL - 58

SP - 2893

EP - 2896

JO - Materials Letters

JF - Materials Letters

IS - 22-23

ER -

Field emission from GaN nanobelts with herringbone morphology

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Keywords

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