Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection

W. P. Wang; Y. Hou; N. Li; Z. F. Li; X. S. Chen; W. Lu; W. X. Wang; H. Chen; J. M. Zhou; E. Wu; H. P. Zeng

doi:10.1063/1.3095844

Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection

W. P. Wang, Y. Hou, N. Li, Z. F. Li, X. S. Chen, W. Lu, W. X. Wang, H. Chen, J. M. Zhou, E. Wu, H. P. Zeng

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A field effect enhanced quantum dot resonant tunneling diode is proposed and demonstrated to improve the detection dynamic range for low light imaging application. Using the cross-wire device geometry, a lateral two dimensional electron gas (2DEG) current is formed in the quantum well channel together with the normal resonant tunneling current for quantum dot modulation. A peak photoresponsivity of the order of 10¹⁰ A/W and a light detection saturation level up to 10⁵ photons per second at 77 K are achieved when the 2DEG current makes the main photocurrent contribution.

Original language	English
Article number	093511
Journal	Applied Physics Letters
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.3095844
State	Published - 2009

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title = "Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection",

abstract = "A field effect enhanced quantum dot resonant tunneling diode is proposed and demonstrated to improve the detection dynamic range for low light imaging application. Using the cross-wire device geometry, a lateral two dimensional electron gas (2DEG) current is formed in the quantum well channel together with the normal resonant tunneling current for quantum dot modulation. A peak photoresponsivity of the order of 1010 A/W and a light detection saturation level up to 105 photons per second at 77 K are achieved when the 2DEG current makes the main photocurrent contribution.",

author = "Wang, \{W. P.\} and Y. Hou and N. Li and Li, \{Z. F.\} and Chen, \{X. S.\} and W. Lu and Wang, \{W. X.\} and H. Chen and Zhou, \{J. M.\} and E. Wu and Zeng, \{H. P.\}",

year = "2009",

doi = "10.1063/1.3095844",

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T1 - Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection

AU - Wang, W. P.

AU - Hou, Y.

AU - Li, N.

AU - Li, Z. F.

AU - Chen, X. S.

AU - Lu, W.

AU - Wang, W. X.

AU - Chen, H.

AU - Zhou, J. M.

AU - Wu, E.

AU - Zeng, H. P.

PY - 2009

Y1 - 2009

N2 - A field effect enhanced quantum dot resonant tunneling diode is proposed and demonstrated to improve the detection dynamic range for low light imaging application. Using the cross-wire device geometry, a lateral two dimensional electron gas (2DEG) current is formed in the quantum well channel together with the normal resonant tunneling current for quantum dot modulation. A peak photoresponsivity of the order of 1010 A/W and a light detection saturation level up to 105 photons per second at 77 K are achieved when the 2DEG current makes the main photocurrent contribution.

AB - A field effect enhanced quantum dot resonant tunneling diode is proposed and demonstrated to improve the detection dynamic range for low light imaging application. Using the cross-wire device geometry, a lateral two dimensional electron gas (2DEG) current is formed in the quantum well channel together with the normal resonant tunneling current for quantum dot modulation. A peak photoresponsivity of the order of 1010 A/W and a light detection saturation level up to 105 photons per second at 77 K are achieved when the 2DEG current makes the main photocurrent contribution.

UR - https://www.scopus.com/pages/publications/62149103609

U2 - 10.1063/1.3095844

DO - 10.1063/1.3095844

M3 - 文章

AN - SCOPUS:62149103609

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093511

ER -

Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection

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