Fib‐assisted fabrication of single tellurium nanotube based high performance photodetector

  • Wangqiong Xu
  • , Ying Lu
  • , Weibin Lei
  • , Fengrui Sui
  • , Ruru Ma
  • , Ruijuan Qi*
  • , Rong Huang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high‐performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)‐ assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.

Original languageEnglish
Article number11
JournalMicromachines
Volume13
Issue number1
DOIs
StatePublished - Jan 2022

Keywords

  • FIB‐assisted
  • Optoelectronics
  • Photodetector
  • Te nanotube

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