Abstract
Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high‐performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)‐ assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.
| Original language | English |
|---|---|
| Article number | 11 |
| Journal | Micromachines |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2022 |
Keywords
- FIB‐assisted
- Optoelectronics
- Photodetector
- Te nanotube