Abstract
High-quality epitaxial LaMnO3/LaAlO3 superlattices (SLs) with (0 0 1), (0 1 1), and (1 1 1) out-of-plane orientation were grown by pulsed laser deposition. This SL material was predicted theoretically as a Chern insulator for realizing the quantum anomalous Hall effect. In our investigations, a paramagnetic-ferromagnetic phase transition is found with decreasing temperature around 100 K, indicating a controllable ferroic order at low temperatures. Electrical transport measurements reveal a thermally activated single-gap behavior with a fitted band gap of 436 meV for the (1 1 1)-oriented SL. With that, the results prove the predictions of a ferromagnetic background in the SLs, and of a gapped band structure.
| Original language | English |
|---|---|
| Article number | 43LT02 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 50 |
| Issue number | 43 |
| DOIs | |
| State | Published - 3 Oct 2017 |
| Externally published | Yes |
Keywords
- LaMnO/LaAlO superlattice
- electrical conductivity
- ferromagnetic phase transition
- gapped band structure
- interface functionality
- oxide thin films
- pulsed laser deposition
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