Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO3/LaAlO3 superlattices

Haoming Wei; Chang Yang; Jose Luis Barzola-Quiquia; Martin Welke; Reinhard Denecke; Christian Patzig; Thomas Höche; Pablo Esquinazi; Marius Grundmann; Michael Lorenz

doi:10.1088/1361-6463/aa8b9f

Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO₃/LaAlO₃ superlattices

Haoming Wei
, Chang Yang
, Jose Luis Barzola-Quiquia
, Martin Welke
, Reinhard Denecke
, Christian Patzig
, Thomas Höche
, Pablo Esquinazi
, Marius Grundmann
, Michael Lorenz

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

High-quality epitaxial LaMnO₃/LaAlO₃ superlattices (SLs) with (0 0 1), (0 1 1), and (1 1 1) out-of-plane orientation were grown by pulsed laser deposition. This SL material was predicted theoretically as a Chern insulator for realizing the quantum anomalous Hall effect. In our investigations, a paramagnetic-ferromagnetic phase transition is found with decreasing temperature around 100 K, indicating a controllable ferroic order at low temperatures. Electrical transport measurements reveal a thermally activated single-gap behavior with a fitted band gap of 436 meV for the (1 1 1)-oriented SL. With that, the results prove the predictions of a ferromagnetic background in the SLs, and of a gapped band structure.

Original language	English
Article number	43LT02
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	43
DOIs	https://doi.org/10.1088/1361-6463/aa8b9f
State	Published - 3 Oct 2017
Externally published	Yes

Keywords

LaMnO/LaAlO superlattice
electrical conductivity
ferromagnetic phase transition
gapped band structure
interface functionality
oxide thin films
pulsed laser deposition

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10.1088/1361-6463/aa8b9f

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title = "Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO3/LaAlO3 superlattices",

abstract = "High-quality epitaxial LaMnO3/LaAlO3 superlattices (SLs) with (0 0 1), (0 1 1), and (1 1 1) out-of-plane orientation were grown by pulsed laser deposition. This SL material was predicted theoretically as a Chern insulator for realizing the quantum anomalous Hall effect. In our investigations, a paramagnetic-ferromagnetic phase transition is found with decreasing temperature around 100 K, indicating a controllable ferroic order at low temperatures. Electrical transport measurements reveal a thermally activated single-gap behavior with a fitted band gap of 436 meV for the (1 1 1)-oriented SL. With that, the results prove the predictions of a ferromagnetic background in the SLs, and of a gapped band structure.",

keywords = "LaMnO/LaAlO superlattice, electrical conductivity, ferromagnetic phase transition, gapped band structure, interface functionality, oxide thin films, pulsed laser deposition",

author = "Haoming Wei and Chang Yang and Barzola-Quiquia, \{Jose Luis\} and Martin Welke and Reinhard Denecke and Christian Patzig and Thomas H{\"o}che and Pablo Esquinazi and Marius Grundmann and Michael Lorenz",

note = "Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

year = "2017",

month = oct,

day = "3",

doi = "10.1088/1361-6463/aa8b9f",

language = "英语",

volume = "50",

journal = "Journal of Physics D: Applied Physics",

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publisher = "Institute of Physics",

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TY - JOUR

T1 - Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO3/LaAlO3 superlattices

AU - Wei, Haoming

AU - Yang, Chang

AU - Barzola-Quiquia, Jose Luis

AU - Welke, Martin

AU - Denecke, Reinhard

AU - Patzig, Christian

AU - Höche, Thomas

AU - Esquinazi, Pablo

AU - Grundmann, Marius

AU - Lorenz, Michael

PY - 2017/10/3

Y1 - 2017/10/3

N2 - High-quality epitaxial LaMnO3/LaAlO3 superlattices (SLs) with (0 0 1), (0 1 1), and (1 1 1) out-of-plane orientation were grown by pulsed laser deposition. This SL material was predicted theoretically as a Chern insulator for realizing the quantum anomalous Hall effect. In our investigations, a paramagnetic-ferromagnetic phase transition is found with decreasing temperature around 100 K, indicating a controllable ferroic order at low temperatures. Electrical transport measurements reveal a thermally activated single-gap behavior with a fitted band gap of 436 meV for the (1 1 1)-oriented SL. With that, the results prove the predictions of a ferromagnetic background in the SLs, and of a gapped band structure.

AB - High-quality epitaxial LaMnO3/LaAlO3 superlattices (SLs) with (0 0 1), (0 1 1), and (1 1 1) out-of-plane orientation were grown by pulsed laser deposition. This SL material was predicted theoretically as a Chern insulator for realizing the quantum anomalous Hall effect. In our investigations, a paramagnetic-ferromagnetic phase transition is found with decreasing temperature around 100 K, indicating a controllable ferroic order at low temperatures. Electrical transport measurements reveal a thermally activated single-gap behavior with a fitted band gap of 436 meV for the (1 1 1)-oriented SL. With that, the results prove the predictions of a ferromagnetic background in the SLs, and of a gapped band structure.

KW - LaMnO/LaAlO superlattice

KW - electrical conductivity

KW - ferromagnetic phase transition

KW - gapped band structure

KW - interface functionality

KW - oxide thin films

KW - pulsed laser deposition

UR - https://www.scopus.com/pages/publications/85032203652

U2 - 10.1088/1361-6463/aa8b9f

DO - 10.1088/1361-6463/aa8b9f

M3 - 文章

AN - SCOPUS:85032203652

SN - 0022-3727

VL - 50

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 43

M1 - 43LT02

ER -

Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO₃/LaAlO₃ superlattices

Abstract

Keywords

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