Ferroelectricity of pristine Hf0.5Zr0.5O2 films fabricated by atomic layer deposition

Luqiu Chen; Xiaoxu Zhang; Guangdi Feng; Yifei Liu; Shenglan Hao; Qiuxiang Zhu; Xiaoyu Feng; Ke Qu; Zhenzhong Yang; Yuanshen Qi; Yachin Ivry; Brahim Dkhil; Bobo Tian; Junhao Chu; Chungang Duan

doi:10.1088/1674-1056/accff3

Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition

Luqiu Chen, Xiaoxu Zhang, Guangdi Feng, Yifei Liu, Shenglan Hao, Qiuxiang Zhu^*, Xiaoyu Feng, Ke Qu, Zhenzhong Yang, Yuanshen Qi, Yachin Ivry, Brahim Dkhil, Bobo Tian^*, Junhao Chu, Chungang Duan

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (P _r) value of < 5 μC/cm² can be obtained in as-deposited Hf_0.5Zr_0.5O₂ (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.

Original language	English
Article number	108102
Journal	Chinese Physics B
Volume	32
Issue number	10
DOIs	https://doi.org/10.1088/1674-1056/accff3
State	Published - 1 Oct 2023

Keywords

HfZrO (HZO)
ferroelectric
orthorhombic
without annealing

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10.1088/1674-1056/accff3

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@article{5d652e7773c24bbab40d195876d48cb4,

title = "Ferroelectricity of pristine Hf0.5Zr0.5O2 films fabricated by atomic layer deposition",

abstract = "Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (P r) value of < 5 μC/cm2 can be obtained in as-deposited Hf0.5Zr0.5O2 (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.",

keywords = "HfZrO (HZO), ferroelectric, orthorhombic, without annealing",

author = "Luqiu Chen and Xiaoxu Zhang and Guangdi Feng and Yifei Liu and Shenglan Hao and Qiuxiang Zhu and Xiaoyu Feng and Ke Qu and Zhenzhong Yang and Yuanshen Qi and Yachin Ivry and Brahim Dkhil and Bobo Tian and Junhao Chu and Chungang Duan",

note = "Publisher Copyright: {\textcopyright} 2023 Chinese Physical Society and IOP Publishing Ltd",

year = "2023",

month = oct,

day = "1",

doi = "10.1088/1674-1056/accff3",

language = "英语",

volume = "32",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "IOP Publishing Ltd.",

number = "10",

}

TY - JOUR

T1 - Ferroelectricity of pristine Hf0.5Zr0.5O2 films fabricated by atomic layer deposition

AU - Chen, Luqiu

AU - Zhang, Xiaoxu

AU - Feng, Guangdi

AU - Liu, Yifei

AU - Hao, Shenglan

AU - Zhu, Qiuxiang

AU - Feng, Xiaoyu

AU - Qu, Ke

AU - Yang, Zhenzhong

AU - Qi, Yuanshen

AU - Ivry, Yachin

AU - Dkhil, Brahim

AU - Tian, Bobo

AU - Chu, Junhao

AU - Duan, Chungang

PY - 2023/10/1

Y1 - 2023/10/1

N2 - Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (P r) value of < 5 μC/cm2 can be obtained in as-deposited Hf0.5Zr0.5O2 (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.

AB - Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (P r) value of < 5 μC/cm2 can be obtained in as-deposited Hf0.5Zr0.5O2 (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.

KW - HfZrO (HZO)

KW - ferroelectric

KW - orthorhombic

KW - without annealing

UR - https://www.scopus.com/pages/publications/85182282451

U2 - 10.1088/1674-1056/accff3

DO - 10.1088/1674-1056/accff3

M3 - 文章

AN - SCOPUS:85182282451

SN - 1674-1056

VL - 32

JO - Chinese Physics B

JF - Chinese Physics B

IS - 10

M1 - 108102

ER -

Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition

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Keywords

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