Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3Multilayers

Xiaokang Yao; Can Wang; Er Jia Guo; Xinyan Wang; Xiaomei Li; Lei Liao; Yong Zhou; Shan Lin; Qiao Jin; Chen Ge; Meng He; Xuedong Bai; Peng Gao; Guozhen Yang; Kui Juan Jin

doi:10.1021/acsami.1c21703

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO₃/BiFeO₃Multilayers

Xiaokang Yao, Can Wang, Er Jia Guo, Xinyan Wang, Xiaomei Li, Lei Liao, Yong Zhou, Shan Lin, Qiao Jin, Chen Ge, Meng He, Xuedong Bai, Peng Gao, Guozhen Yang, Kui Juan Jin

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.

Original language	English
Pages (from-to)	6194-6202
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	14
Issue number	4
DOIs	https://doi.org/10.1021/acsami.1c21703
State	Published - 2 Feb 2022
Externally published	Yes

Keywords

complex oxides
ferroelectric proximity effect
interfacial physics
magnetism
transport

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10.1021/acsami.1c21703

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title = "Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3Multilayers",

abstract = "Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.",

keywords = "complex oxides, ferroelectric proximity effect, interfacial physics, magnetism, transport",

author = "Xiaokang Yao and Can Wang and Guo, \{Er Jia\} and Xinyan Wang and Xiaomei Li and Lei Liao and Yong Zhou and Shan Lin and Qiao Jin and Chen Ge and Meng He and Xuedong Bai and Peng Gao and Guozhen Yang and Jin, \{Kui Juan\}",

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doi = "10.1021/acsami.1c21703",

language = "英语",

volume = "14",

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TY - JOUR

T1 - Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3Multilayers

AU - Yao, Xiaokang

AU - Wang, Can

AU - Guo, Er Jia

AU - Wang, Xinyan

AU - Li, Xiaomei

AU - Liao, Lei

AU - Zhou, Yong

AU - Lin, Shan

AU - Jin, Qiao

AU - Ge, Chen

AU - He, Meng

AU - Bai, Xuedong

AU - Gao, Peng

AU - Yang, Guozhen

AU - Jin, Kui Juan

PY - 2022/2/2

Y1 - 2022/2/2

N2 - Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.

AB - Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.

KW - complex oxides

KW - ferroelectric proximity effect

KW - interfacial physics

KW - magnetism

KW - transport

UR - https://www.scopus.com/pages/publications/85124056457

U2 - 10.1021/acsami.1c21703

DO - 10.1021/acsami.1c21703

M3 - 文章

C2 - 35072446

AN - SCOPUS:85124056457

SN - 1944-8244

VL - 14

SP - 6194

EP - 6202

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 4

ER -

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO₃/BiFeO₃Multilayers

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