Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

Hai Huang; Xudong Wang; Peng Wang; Guangjian Wu; Yan Chen; Caimin Meng; Lei Liao; Jianlu Wang; Weida Hu; Hong Shen; Tie Lin; Jinglan Sun; Xiangjian Meng; Xiaoshuang Chen; Junhao Chu

doi:10.1039/c6ra18238k

Ferroelectric polymer tuned two dimensional layered MoTe₂ photodetector

Hai Huang, Xudong Wang, Peng Wang, Guangjian Wu, Yan Chen, Caimin Meng, Lei Liao, Jianlu Wang, Weida Hu, Hong Shen, Tie Lin, Jinglan Sun, Xiangjian Meng, Xiaoshuang Chen, Junhao Chu

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe₂ based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe₂ phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6-1.5 μm), the responsivity and detectivity reach 16.4 mA W^-1 and 1.94 × 10⁸ Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.

Original language	English
Pages (from-to)	87416-87421
Number of pages	6
Journal	RSC Advances
Volume	6
Issue number	90
DOIs	https://doi.org/10.1039/c6ra18238k
State	Published - 2016
Externally published	Yes

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title = "Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector",

abstract = "Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe2 phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6-1.5 μm), the responsivity and detectivity reach 16.4 mA W-1 and 1.94 × 108 Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.",

author = "Hai Huang and Xudong Wang and Peng Wang and Guangjian Wu and Yan Chen and Caimin Meng and Lei Liao and Jianlu Wang and Weida Hu and Hong Shen and Tie Lin and Jinglan Sun and Xiangjian Meng and Xiaoshuang Chen and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2016 The Royal Society of Chemistry.",

year = "2016",

doi = "10.1039/c6ra18238k",

language = "英语",

volume = "6",

pages = "87416--87421",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "90",

}

TY - JOUR

T1 - Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

AU - Huang, Hai

AU - Wang, Xudong

AU - Wang, Peng

AU - Wu, Guangjian

AU - Chen, Yan

AU - Meng, Caimin

AU - Liao, Lei

AU - Wang, Jianlu

AU - Hu, Weida

AU - Shen, Hong

AU - Lin, Tie

AU - Sun, Jinglan

AU - Meng, Xiangjian

AU - Chen, Xiaoshuang

AU - Chu, Junhao

PY - 2016

Y1 - 2016

N2 - Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe2 phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6-1.5 μm), the responsivity and detectivity reach 16.4 mA W-1 and 1.94 × 108 Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.

AB - Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe2 phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6-1.5 μm), the responsivity and detectivity reach 16.4 mA W-1 and 1.94 × 108 Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.

UR - https://www.scopus.com/pages/publications/84987905525

U2 - 10.1039/c6ra18238k

DO - 10.1039/c6ra18238k

M3 - 文章

AN - SCOPUS:84987905525

SN - 2046-2069

VL - 6

SP - 87416

EP - 87421

JO - RSC Advances

JF - RSC Advances

IS - 90

ER -

Ferroelectric polymer tuned two dimensional layered MoTe₂ photodetector

Abstract

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