Ferroelectric polaron in layered perovskite ferroelectric thin films

Ping Xiong Yang; Xiang Jian Meng; Zhi Ming Huang; Jun Hao Chu

Ferroelectric polaron in layered perovskite ferroelectric thin films

Ping Xiong Yang^*, Xiang Jian Meng, Zhi Ming Huang, Jun Hao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

High quality SrBi₂Ta₂O₉ (SBT) ferroelectric thin films were fabricated on platinized silicon substrate by pulsed laser deposition. Electronic transport properties of SBT ferroelectric thin films in temperature range of 10 K to 300 K were studied. The conduction mechanisms in the thin films were analyzed. The results indicate the existence of two conduction mechanisms in SBT ferroelectric thin films. Due to the SBT layered structure, the carrier transport can be divided into two parts: internal transport, which is between the (Bi₂O₂)²⁺ layers; external transport, which is across the (Bi₂O₂)²⁺ layers. Especially, behavior of electric transport of the polaron as an internal transport carrier is first observed in the SBT ferroelectric thin films. Activation energy of the internal transport carriers is E_a-0.0556 eV. The results can be helpful to understanding the low DC leakage in SBT films at room temperature.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	24
Issue number	1
State	Published - Feb 2005

Keywords

Electronic transport
Ferroelectric
Polaron

Cite this

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title = "Ferroelectric polaron in layered perovskite ferroelectric thin films",

abstract = "High quality SrBi2Ta2O9 (SBT) ferroelectric thin films were fabricated on platinized silicon substrate by pulsed laser deposition. Electronic transport properties of SBT ferroelectric thin films in temperature range of 10 K to 300 K were studied. The conduction mechanisms in the thin films were analyzed. The results indicate the existence of two conduction mechanisms in SBT ferroelectric thin films. Due to the SBT layered structure, the carrier transport can be divided into two parts: internal transport, which is between the (Bi2O2)2+ layers; external transport, which is across the (Bi2O2)2+ layers. Especially, behavior of electric transport of the polaron as an internal transport carrier is first observed in the SBT ferroelectric thin films. Activation energy of the internal transport carriers is Ea-0.0556 eV. The results can be helpful to understanding the low DC leakage in SBT films at room temperature.",

keywords = "Electronic transport, Ferroelectric, Polaron",

author = "Yang, \{Ping Xiong\} and Meng, \{Xiang Jian\} and Huang, \{Zhi Ming\} and Chu, \{Jun Hao\}",

year = "2005",

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volume = "24",

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journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

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TY - JOUR

T1 - Ferroelectric polaron in layered perovskite ferroelectric thin films

AU - Yang, Ping Xiong

AU - Meng, Xiang Jian

AU - Huang, Zhi Ming

AU - Chu, Jun Hao

PY - 2005/2

Y1 - 2005/2

N2 - High quality SrBi2Ta2O9 (SBT) ferroelectric thin films were fabricated on platinized silicon substrate by pulsed laser deposition. Electronic transport properties of SBT ferroelectric thin films in temperature range of 10 K to 300 K were studied. The conduction mechanisms in the thin films were analyzed. The results indicate the existence of two conduction mechanisms in SBT ferroelectric thin films. Due to the SBT layered structure, the carrier transport can be divided into two parts: internal transport, which is between the (Bi2O2)2+ layers; external transport, which is across the (Bi2O2)2+ layers. Especially, behavior of electric transport of the polaron as an internal transport carrier is first observed in the SBT ferroelectric thin films. Activation energy of the internal transport carriers is Ea-0.0556 eV. The results can be helpful to understanding the low DC leakage in SBT films at room temperature.

AB - High quality SrBi2Ta2O9 (SBT) ferroelectric thin films were fabricated on platinized silicon substrate by pulsed laser deposition. Electronic transport properties of SBT ferroelectric thin films in temperature range of 10 K to 300 K were studied. The conduction mechanisms in the thin films were analyzed. The results indicate the existence of two conduction mechanisms in SBT ferroelectric thin films. Due to the SBT layered structure, the carrier transport can be divided into two parts: internal transport, which is between the (Bi2O2)2+ layers; external transport, which is across the (Bi2O2)2+ layers. Especially, behavior of electric transport of the polaron as an internal transport carrier is first observed in the SBT ferroelectric thin films. Activation energy of the internal transport carriers is Ea-0.0556 eV. The results can be helpful to understanding the low DC leakage in SBT films at room temperature.

KW - Electronic transport

KW - Ferroelectric

KW - Polaron

UR - https://www.scopus.com/pages/publications/17244380541

M3 - 文章

AN - SCOPUS:17244380541

SN - 1001-9014

VL - 24

SP - 1

EP - 6

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 1

ER -

Ferroelectric polaron in layered perovskite ferroelectric thin films

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