Ferroelectric Polarization Assisted Trapping Memcapacitor

Luqiu Chen; Guangdi Feng; Jianquan Liu; Shenglan Hao; Qiuxiang Zhu; Bobo Tian; Chungang Duan

doi:10.1109/ICEICT57916.2023.10245302

Ferroelectric Polarization Assisted Trapping Memcapacitor

Luqiu Chen
, Guangdi Feng
, Jianquan Liu
, Shenglan Hao
, Qiuxiang Zhu
, Bobo Tian
, Chungang Duan

School of Physics and Electronic Science

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this letter, a ferroelectric memcapacitor based on Hf0.5Zr0.5O2(HZO) deposited by atomic layer deposition (ALD) is fabricated. The synergistic effect of ferroelectric polarization and charge trapping behavior is used for achieving reliable memory properties and controllable intermediate states. The memcapacitors themselves generate no joule heat during the processing. This work paves a way for ultralow-power memory based on ferroelectric memcapacitors.

Original language	English
Title of host publication	2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1196-1198
Number of pages	3
ISBN (Electronic)	9798350399059
DOIs	https://doi.org/10.1109/ICEICT57916.2023.10245302
State	Published - 2023
Event	6th IEEE International Conference on Electronic Information and Communication Technology, ICEICT 2023 - Qingdao, China Duration: 21 Jul 2023 → 24 Jul 2023

Publication series

Name	2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023

Conference

Conference	6th IEEE International Conference on Electronic Information and Communication Technology, ICEICT 2023
Country/Territory	China
City	Qingdao
Period	21/07/23 → 24/07/23

Keywords

HZO
ferroelectric
memcapacitor
memory
trapping

Access to Document

10.1109/ICEICT57916.2023.10245302

Cite this

Chen, L., Feng, G., Liu, J., Hao, S., Zhu, Q., Tian, B., & Duan, C. (2023). Ferroelectric Polarization Assisted Trapping Memcapacitor. In 2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023 (pp. 1196-1198). (2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEICT57916.2023.10245302

Chen, Luqiu ; Feng, Guangdi ; Liu, Jianquan et al. / Ferroelectric Polarization Assisted Trapping Memcapacitor. 2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 1196-1198 (2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023).

@inproceedings{fd5a6ee37c56403fa4ca293d9fd0bfa5,

title = "Ferroelectric Polarization Assisted Trapping Memcapacitor",

abstract = "In this letter, a ferroelectric memcapacitor based on Hf0.5Zr0.5O2(HZO) deposited by atomic layer deposition (ALD) is fabricated. The synergistic effect of ferroelectric polarization and charge trapping behavior is used for achieving reliable memory properties and controllable intermediate states. The memcapacitors themselves generate no joule heat during the processing. This work paves a way for ultralow-power memory based on ferroelectric memcapacitors.",

keywords = "HZO, ferroelectric, memcapacitor, memory, trapping",

author = "Luqiu Chen and Guangdi Feng and Jianquan Liu and Shenglan Hao and Qiuxiang Zhu and Bobo Tian and Chungang Duan",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 6th IEEE International Conference on Electronic Information and Communication Technology, ICEICT 2023 ; Conference date: 21-07-2023 Through 24-07-2023",

year = "2023",

doi = "10.1109/ICEICT57916.2023.10245302",

language = "英语",

series = "2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1196--1198",

booktitle = "2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023",

address = "美国",

}

Chen, L, Feng, G, Liu, J, Hao, S, Zhu, Q , Tian, B & Duan, C 2023, Ferroelectric Polarization Assisted Trapping Memcapacitor. in 2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023. 2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023, Institute of Electrical and Electronics Engineers Inc., pp. 1196-1198, 6th IEEE International Conference on Electronic Information and Communication Technology, ICEICT 2023, Qingdao, China, 21/07/23. https://doi.org/10.1109/ICEICT57916.2023.10245302

Ferroelectric Polarization Assisted Trapping Memcapacitor. / Chen, Luqiu; Feng, Guangdi; Liu, Jianquan et al.
2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 1196-1198 (2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ferroelectric Polarization Assisted Trapping Memcapacitor

AU - Chen, Luqiu

AU - Feng, Guangdi

AU - Liu, Jianquan

AU - Hao, Shenglan

AU - Zhu, Qiuxiang

AU - Tian, Bobo

AU - Duan, Chungang

PY - 2023

Y1 - 2023

N2 - In this letter, a ferroelectric memcapacitor based on Hf0.5Zr0.5O2(HZO) deposited by atomic layer deposition (ALD) is fabricated. The synergistic effect of ferroelectric polarization and charge trapping behavior is used for achieving reliable memory properties and controllable intermediate states. The memcapacitors themselves generate no joule heat during the processing. This work paves a way for ultralow-power memory based on ferroelectric memcapacitors.

AB - In this letter, a ferroelectric memcapacitor based on Hf0.5Zr0.5O2(HZO) deposited by atomic layer deposition (ALD) is fabricated. The synergistic effect of ferroelectric polarization and charge trapping behavior is used for achieving reliable memory properties and controllable intermediate states. The memcapacitors themselves generate no joule heat during the processing. This work paves a way for ultralow-power memory based on ferroelectric memcapacitors.

KW - HZO

KW - ferroelectric

KW - memcapacitor

KW - memory

KW - trapping

UR - https://www.scopus.com/pages/publications/85173885091

U2 - 10.1109/ICEICT57916.2023.10245302

DO - 10.1109/ICEICT57916.2023.10245302

M3 - 会议稿件

AN - SCOPUS:85173885091

T3 - 2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023

SP - 1196

EP - 1198

BT - 2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE International Conference on Electronic Information and Communication Technology, ICEICT 2023

Y2 - 21 July 2023 through 24 July 2023

ER -

Chen L, Feng G, Liu J, Hao S, Zhu Q , Tian B et al. Ferroelectric Polarization Assisted Trapping Memcapacitor. In 2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 1196-1198. (2023 IEEE 6th International Conference on Electronic Information and Communication Technology, ICEICT 2023). doi: 10.1109/ICEICT57916.2023.10245302

Ferroelectric Polarization Assisted Trapping Memcapacitor

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