TY - JOUR
T1 - Ferroelectric field effect transistors for electronics and optoelectronics
AU - Jiao, Hanxue
AU - Wang, Xudong
AU - Wu, Shuaiqin
AU - Chen, Yan
AU - Chu, Junhao
AU - Wang, Jianlu
N1 - Publisher Copyright:
© 2023 Author(s).
PY - 2023/3
Y1 - 2023/3
N2 - Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetectors, and smart sensors. In this review, representative research results of FeFETs are reviewed from the perspective of structures and applications. Here, the background and significance of ferroelectrics and FeFETs are given. Furthermore, methods of building FeFETs in different structures and physical models describing the characteristics of FeFET are introduced. Important applications of FeFETs in electronics and optoelectronics are presented, with a comparison of performance between FeFETs and FETs without ferroelectrics, including memories and memristive devices, photodetectors, negative capacitance FETs, sensors, and multifunctional devices. Finally, based on the above discussions, promising applications and challenges of FeFETs are summarized.
AB - Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetectors, and smart sensors. In this review, representative research results of FeFETs are reviewed from the perspective of structures and applications. Here, the background and significance of ferroelectrics and FeFETs are given. Furthermore, methods of building FeFETs in different structures and physical models describing the characteristics of FeFET are introduced. Important applications of FeFETs in electronics and optoelectronics are presented, with a comparison of performance between FeFETs and FETs without ferroelectrics, including memories and memristive devices, photodetectors, negative capacitance FETs, sensors, and multifunctional devices. Finally, based on the above discussions, promising applications and challenges of FeFETs are summarized.
UR - https://www.scopus.com/pages/publications/85149041432
U2 - 10.1063/5.0090120
DO - 10.1063/5.0090120
M3 - 文献综述
AN - SCOPUS:85149041432
SN - 1931-9401
VL - 10
JO - Applied Physics Reviews
JF - Applied Physics Reviews
IS - 1
M1 - 011310
ER -