Ferroelectric control of magnetism in BaTi O3 Fe heterostructures via interface strain coupling

Sarbeswar Sahoo; Srinivas Polisetty; Chun Gang Duan; Sitaram S. Jaswal; Evgeny Y. Tsymbal; Christian Binek

doi:10.1103/PhysRevB.76.092108

Ferroelectric control of magnetism in BaTi O3 Fe heterostructures via interface strain coupling

Sarbeswar Sahoo^*
, Srinivas Polisetty
, Chun Gang Duan
, Sitaram S. Jaswal
, Evgeny Y. Tsymbal
, Christian Binek

^*Corresponding author for this work

University of Nebraska-Lincoln

Research output: Contribution to journal › Article › peer-review

330 Scopus citations

Abstract

Reversible control of magnetism is reported for a Fe thin film in proximity of a BaTi O3 single crystal. Large magnetization changes emerge in response to ferroelectric switching and structural transitions of BaTi O3 controlled by applied electric fields and temperature, respectively. Interface strain coupling is the primary mechanism altering the induced magnetic anisotropy. As a result, coercivity changes up to 120% occur between the various structural states of BaTi O3. Up to 20% coercivity change is achieved via electrical control at room temperature. Our all solid state ferroelectric-ferromagnetic heterostructures open viable possibilities for technological applications.

Original language	English
Article number	092108
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	76
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevB.76.092108
State	Published - 24 Sep 2007
Externally published	Yes

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10.1103/PhysRevB.76.092108

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title = "Ferroelectric control of magnetism in BaTi O3 Fe heterostructures via interface strain coupling",

abstract = "Reversible control of magnetism is reported for a Fe thin film in proximity of a BaTi O3 single crystal. Large magnetization changes emerge in response to ferroelectric switching and structural transitions of BaTi O3 controlled by applied electric fields and temperature, respectively. Interface strain coupling is the primary mechanism altering the induced magnetic anisotropy. As a result, coercivity changes up to 120\% occur between the various structural states of BaTi O3. Up to 20\% coercivity change is achieved via electrical control at room temperature. Our all solid state ferroelectric-ferromagnetic heterostructures open viable possibilities for technological applications.",

author = "Sarbeswar Sahoo and Srinivas Polisetty and Duan, \{Chun Gang\} and Jaswal, \{Sitaram S.\} and Tsymbal, \{Evgeny Y.\} and Christian Binek",

year = "2007",

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doi = "10.1103/PhysRevB.76.092108",

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T1 - Ferroelectric control of magnetism in BaTi O3 Fe heterostructures via interface strain coupling

AU - Sahoo, Sarbeswar

AU - Polisetty, Srinivas

AU - Duan, Chun Gang

AU - Jaswal, Sitaram S.

AU - Tsymbal, Evgeny Y.

AU - Binek, Christian

PY - 2007/9/24

Y1 - 2007/9/24

N2 - Reversible control of magnetism is reported for a Fe thin film in proximity of a BaTi O3 single crystal. Large magnetization changes emerge in response to ferroelectric switching and structural transitions of BaTi O3 controlled by applied electric fields and temperature, respectively. Interface strain coupling is the primary mechanism altering the induced magnetic anisotropy. As a result, coercivity changes up to 120% occur between the various structural states of BaTi O3. Up to 20% coercivity change is achieved via electrical control at room temperature. Our all solid state ferroelectric-ferromagnetic heterostructures open viable possibilities for technological applications.

AB - Reversible control of magnetism is reported for a Fe thin film in proximity of a BaTi O3 single crystal. Large magnetization changes emerge in response to ferroelectric switching and structural transitions of BaTi O3 controlled by applied electric fields and temperature, respectively. Interface strain coupling is the primary mechanism altering the induced magnetic anisotropy. As a result, coercivity changes up to 120% occur between the various structural states of BaTi O3. Up to 20% coercivity change is achieved via electrical control at room temperature. Our all solid state ferroelectric-ferromagnetic heterostructures open viable possibilities for technological applications.

UR - https://www.scopus.com/pages/publications/34848851367

U2 - 10.1103/PhysRevB.76.092108

DO - 10.1103/PhysRevB.76.092108

M3 - 文章

AN - SCOPUS:34848851367

SN - 1098-0121

VL - 76

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 9

M1 - 092108

ER -

Ferroelectric control of magnetism in BaTi O3 Fe heterostructures via interface strain coupling

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