Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe2/In2Se3

  • Chen Hu
  • , Ju Chen
  • , Erwei Du
  • , Weiwei Ju
  • , Yipeng An
  • , Shi Jing Gong*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe2/In2Se3 experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In2Se3, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In2Se3 to VSe2, the heterostructure has a type-III band alignment, and the charge transfer from In2Se3 into VSe2 induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In2Se3 is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe2 was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe2/In2Se3 predicts its wide applications in the fields of both 2D spintronics and multiferroics.

Original languageEnglish
Article number425801
JournalJournal of Physics Condensed Matter
Volume34
Issue number42
DOIs
StatePublished - 19 Oct 2022

Keywords

  • VSe
  • band alignment
  • heterostructure
  • multiferroic
  • two dimensional

Fingerprint

Dive into the research topics of 'Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe2/In2Se3'. Together they form a unique fingerprint.

Cite this