FERMI LEVEL AND BURSTEIN-MOSS EFFECT OF DEGENERATE SEMICONDUCTOR Hg//1// minus //xCd//xTe.

The application of the intrinsic carrier concentration formula to narrow gap semiconductor Hg//1// minus //xCd//xTe with degeneration of Fermi level is discussed. The Fermi level in degenerate semiconductor Hg//1// minus //xCd//xTe is calculated by taking account of the non-parabolic band revision factor for the electron concentration in conduction band. The intrinsic absorption spectra of Hg//1// minus //xCd//xTe thin samples with x equals 0. 165(10 mu m), 0. 170(9 mu m), 0. 194(24 mu m) are measured in the temperature range 77 to approx. 300 K, and Burstein-Moss shift is observed obviously. The optical energy gap obtained from the experiment agrees well with the calculated result of Fermi level.