Femtosecond laser pulse induced damage in thin films

Haiyi Sun; Tianqing Jia; Xiaoxi Li; Chengbin Li; Donghai Feng; Shizhen Xu; Zhizhan Xu

doi:10.1117/12.667187

Femtosecond laser pulse induced damage in thin films

Haiyi Sun, Tianqing Jia, Xiaoxi Li, Chengbin Li, Donghai Feng, Shizhen Xu, Zhizhan Xu

CAS - Shanghai Institute of Optics and Fine Mechanics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have investigated the damage for ZrO₂/SiO₂ 800 nm 45° high-reflection mirror and MgF₂/ZnS 800 nm interference filter with femtosecond pulses. The damage morphologies and evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. We also report their single-short damage thresholds for pulse durations ranging from 50 fs to 900 fs, which depart from the diffusion-dominated τ^1/2 scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.

Original language	English
Article number	60281D
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6028
DOIs	https://doi.org/10.1117/12.667187
State	Published - 2005
Externally published	Yes
Event	ICO20: Lasers and Laser Technologies - Changchun, China Duration: 21 Aug 2005 → 26 Aug 2005

Keywords

45° high-reflection mirror
Ablation depth
Damage mechanism
Damage threshold
Femtosecond laser
Interference filter

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10.1117/12.667187

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title = "Femtosecond laser pulse induced damage in thin films",

abstract = "We have investigated the damage for ZrO2/SiO2 800 nm 45° high-reflection mirror and MgF2/ZnS 800 nm interference filter with femtosecond pulses. The damage morphologies and evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. We also report their single-short damage thresholds for pulse durations ranging from 50 fs to 900 fs, which depart from the diffusion-dominated τ1/2 scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.",

keywords = "45° high-reflection mirror, Ablation depth, Damage mechanism, Damage threshold, Femtosecond laser, Interference filter",

author = "Haiyi Sun and Tianqing Jia and Xiaoxi Li and Chengbin Li and Donghai Feng and Shizhen Xu and Zhizhan Xu",

year = "2005",

doi = "10.1117/12.667187",

language = "英语",

volume = "6028",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "ICO20: Lasers and Laser Technologies ; Conference date: 21-08-2005 Through 26-08-2005",

}

TY - JOUR

T1 - Femtosecond laser pulse induced damage in thin films

AU - Sun, Haiyi

AU - Jia, Tianqing

AU - Li, Xiaoxi

AU - Li, Chengbin

AU - Feng, Donghai

AU - Xu, Shizhen

AU - Xu, Zhizhan

PY - 2005

Y1 - 2005

N2 - We have investigated the damage for ZrO2/SiO2 800 nm 45° high-reflection mirror and MgF2/ZnS 800 nm interference filter with femtosecond pulses. The damage morphologies and evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. We also report their single-short damage thresholds for pulse durations ranging from 50 fs to 900 fs, which depart from the diffusion-dominated τ1/2 scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.

AB - We have investigated the damage for ZrO2/SiO2 800 nm 45° high-reflection mirror and MgF2/ZnS 800 nm interference filter with femtosecond pulses. The damage morphologies and evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. We also report their single-short damage thresholds for pulse durations ranging from 50 fs to 900 fs, which depart from the diffusion-dominated τ1/2 scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.

KW - 45° high-reflection mirror

KW - Ablation depth

KW - Damage mechanism

KW - Damage threshold

KW - Femtosecond laser

KW - Interference filter

UR - https://www.scopus.com/pages/publications/33645005992

U2 - 10.1117/12.667187

DO - 10.1117/12.667187

M3 - 会议文章

AN - SCOPUS:33645005992

SN - 0277-786X

VL - 6028

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 60281D

T2 - ICO20: Lasers and Laser Technologies

Y2 - 21 August 2005 through 26 August 2005

ER -

Femtosecond laser pulse induced damage in thin films

Abstract

Keywords

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