Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration

Hao Wang; Ziyu Liu; Lin Chen; Qingqing Sun; Yabin Su; David Wei Zhang

doi:10.1016/j.matlet.2023.134909

Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration

Hao Wang, Ziyu Liu, Lin Chen, Qingqing Sun, Yabin Su, David Wei Zhang

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Multi-chip bonding in 3D integration always consumes much processing time. This study provides a novel mechanical interlock bonding (MIB) technology, which can save bonding time and has lower bonding temperature and pressure. The mechanical interlock structure enables pre-bonded pairs to afford shear force for further transferring. Chip-to-chip bonding is implemented by pre-bonding at the temperature of 150 and 200 °C with the pressure of 0.40 MPa in 5 min, and one-time annealing at the temperature of 260 °C in 30 min. The average shear strength of 70.39 MPa and average Kelvin resistance of 3.23 mΩ show good bonding quality. Interface observation shows continuous intermetallic compound (IMC) comprised of Cu₃Sn/Cu₆Sn₅/Cu₃Sn has formed. Large Cu₆Sn₅ grains are detected which indicate good electromigration resistance. This MIB technology is an economical technology which can be used in 3D integration.

Original language	English
Article number	134909
Journal	Materials Letters
Volume	350
DOIs	https://doi.org/10.1016/j.matlet.2023.134909
State	Published - 1 Nov 2023

Keywords

3D integration
Cu-Sn
Intermetallic alloys and compounds
Mechanical interlock bonding
Microstructure

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10.1016/j.matlet.2023.134909

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@article{38a43d3f76384dd29e4d6e277defa336,

title = "Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration",

abstract = "Multi-chip bonding in 3D integration always consumes much processing time. This study provides a novel mechanical interlock bonding (MIB) technology, which can save bonding time and has lower bonding temperature and pressure. The mechanical interlock structure enables pre-bonded pairs to afford shear force for further transferring. Chip-to-chip bonding is implemented by pre-bonding at the temperature of 150 and 200 °C with the pressure of 0.40 MPa in 5 min, and one-time annealing at the temperature of 260 °C in 30 min. The average shear strength of 70.39 MPa and average Kelvin resistance of 3.23 mΩ show good bonding quality. Interface observation shows continuous intermetallic compound (IMC) comprised of Cu3Sn/Cu6Sn5/Cu3Sn has formed. Large Cu6Sn5 grains are detected which indicate good electromigration resistance. This MIB technology is an economical technology which can be used in 3D integration.",

keywords = "3D integration, Cu-Sn, Intermetallic alloys and compounds, Mechanical interlock bonding, Microstructure",

author = "Hao Wang and Ziyu Liu and Lin Chen and Qingqing Sun and Yabin Su and \{Wei Zhang\}, David",

note = "Publisher Copyright: {\textcopyright} 2023",

year = "2023",

month = nov,

day = "1",

doi = "10.1016/j.matlet.2023.134909",

language = "英语",

volume = "350",

journal = "Materials Letters",

issn = "0167-577X",

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TY - JOUR

T1 - Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration

AU - Wang, Hao

AU - Liu, Ziyu

AU - Chen, Lin

AU - Sun, Qingqing

AU - Su, Yabin

AU - Wei Zhang, David

PY - 2023/11/1

Y1 - 2023/11/1

N2 - Multi-chip bonding in 3D integration always consumes much processing time. This study provides a novel mechanical interlock bonding (MIB) technology, which can save bonding time and has lower bonding temperature and pressure. The mechanical interlock structure enables pre-bonded pairs to afford shear force for further transferring. Chip-to-chip bonding is implemented by pre-bonding at the temperature of 150 and 200 °C with the pressure of 0.40 MPa in 5 min, and one-time annealing at the temperature of 260 °C in 30 min. The average shear strength of 70.39 MPa and average Kelvin resistance of 3.23 mΩ show good bonding quality. Interface observation shows continuous intermetallic compound (IMC) comprised of Cu3Sn/Cu6Sn5/Cu3Sn has formed. Large Cu6Sn5 grains are detected which indicate good electromigration resistance. This MIB technology is an economical technology which can be used in 3D integration.

AB - Multi-chip bonding in 3D integration always consumes much processing time. This study provides a novel mechanical interlock bonding (MIB) technology, which can save bonding time and has lower bonding temperature and pressure. The mechanical interlock structure enables pre-bonded pairs to afford shear force for further transferring. Chip-to-chip bonding is implemented by pre-bonding at the temperature of 150 and 200 °C with the pressure of 0.40 MPa in 5 min, and one-time annealing at the temperature of 260 °C in 30 min. The average shear strength of 70.39 MPa and average Kelvin resistance of 3.23 mΩ show good bonding quality. Interface observation shows continuous intermetallic compound (IMC) comprised of Cu3Sn/Cu6Sn5/Cu3Sn has formed. Large Cu6Sn5 grains are detected which indicate good electromigration resistance. This MIB technology is an economical technology which can be used in 3D integration.

KW - 3D integration

KW - Cu-Sn

KW - Intermetallic alloys and compounds

KW - Mechanical interlock bonding

KW - Microstructure

UR - https://www.scopus.com/pages/publications/85166231942

U2 - 10.1016/j.matlet.2023.134909

DO - 10.1016/j.matlet.2023.134909

M3 - 文章

AN - SCOPUS:85166231942

SN - 0167-577X

VL - 350

JO - Materials Letters

JF - Materials Letters

M1 - 134909

ER -

Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration

Abstract

Keywords

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